All MOSFET. FRM9130R Datasheet

 

FRM9130R Datasheet and Replacement


   Type Designator: FRM9130R
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 220 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO204AA
 

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FRM9130R Datasheet (PDF)

 7.1. Size:57K  intersil
 frm9130.pdf pdf_icon

FRM9130R

FRM9130D, FRM9130R,FRM9130H6A, -100V, 0.550 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETsFeatures Package 6A, -100V, RDS(on) = 0.550TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(S

 9.1. Size:47K  intersil
 frm9140.pdf pdf_icon

FRM9130R

FRM9140D, FRM9140R,FRM9140H11A, -100V, 0.300 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETsFeatures Package 11A, -100V, RDS(on) = 0.300TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD

Datasheet: FRM440D , FRM440H , FRM440R , FRM450D , FRM450H , FRM450R , FRM9130D , FRM9130H , 2N7000 , FRM9140D , FRM9140H , FRM9140R , FRM9230D , FRM9230H , FRM9230R , FRM9240D , FRM9240H .

Keywords - FRM9130R MOSFET datasheet

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