FRM9140D MOSFET. Datasheet pdf. Equivalent
Type Designator: FRM9140D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 236 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO204AA
FRM9140D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FRM9140D Datasheet (PDF)
frm9140.pdf
FRM9140D, FRM9140R,FRM9140H11A, -100V, 0.300 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETsFeatures Package 11A, -100V, RDS(on) = 0.300TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD
frm9130.pdf
FRM9130D, FRM9130R,FRM9130H6A, -100V, 0.550 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETsFeatures Package 6A, -100V, RDS(on) = 0.550TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(S
Datasheet: FRM440H , FRM440R , FRM450D , FRM450H , FRM450R , FRM9130D , FRM9130H , FRM9130R , 12N60 , FRM9140H , FRM9140R , FRM9230D , FRM9230H , FRM9230R , FRM9240D , FRM9240H , FRM9240R .
