FRM9140D Specs and Replacement

Type Designator: FRM9140D

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 236 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO204AA

FRM9140D substitution

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FRM9140D datasheet

 7.1. Size:47K  intersil
 frm9140.pdf pdf_icon

FRM9140D

FRM9140D, FRM9140R, FRM9140H 11A, -100V, 0.300 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package 11A, -100V, RDS(on) = 0.300 TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD... See More ⇒

 9.1. Size:57K  intersil
 frm9130.pdf pdf_icon

FRM9140D

FRM9130D, FRM9130R, FRM9130H 6A, -100V, 0.550 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package 6A, -100V, RDS(on) = 0.550 TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(S... See More ⇒

Detailed specifications: FRM440H, FRM440R, FRM450D, FRM450H, FRM450R, FRM9130D, FRM9130H, FRM9130R, 2SK3878, FRM9140H, FRM9140R, FRM9230D, FRM9230H, FRM9230R, FRM9240D, FRM9240H, FRM9240R

Keywords - FRM9140D MOSFET specs

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