All MOSFET. FRM9230D Datasheet

 

FRM9230D Datasheet and Replacement


   Type Designator: FRM9230D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 74 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO204AA
 

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FRM9230D Datasheet (PDF)

 7.1. Size:57K  intersil
 frm9230.pdf pdf_icon

FRM9230D

FRM9230D, FRM9230R,FRM9230H4A, -200V, 1.30 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETsFeatures Package 4A, -200V, RDS(on) = 1.30TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

 9.1. Size:47K  intersil
 frm9240.pdf pdf_icon

FRM9230D

FRM9240D, FRM9240R,FRM9240H7A, -200V, 0.720 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETsFeatures Package 7A, -200V, RDS(on) = 0.720TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(S

 9.2. Size:49K  intersil
 frm9250.pdf pdf_icon

FRM9230D

FRM9250D, FRM9250R,FRM9250H16A, -200V, 0.300 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETsFeatures Package 16A, -200V, RDS(on) = 0.300TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD

Datasheet: FRM450H , FRM450R , FRM9130D , FRM9130H , FRM9130R , FRM9140D , FRM9140H , FRM9140R , IRF1010E , FRM9230H , FRM9230R , FRM9240D , FRM9240H , FRM9240R , FRM9250D , FRM9250H , FRM9250R .

Keywords - FRM9230D MOSFET datasheet

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