All MOSFET. STK0380F Datasheet

 

STK0380F Datasheet and Replacement


   Type Designator: STK0380F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: TO-220F
 

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STK0380F Datasheet (PDF)

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STK0380F

STK0380FAdvanced N-Ch Power MOSFETSWITCHING REGULATOR APPLICATION Features Drain-source breakdown voltage: BVDSS=800V (Min.) Low gate charge: Qg=14.2nC (Typ.) Low drain-source On resistance: RDS(on)=3.5 (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L STK0380F STK0380 TO-220F-3L

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STK0380F

S DSTK0380DAdvanced N-Ch Power MOSFEETSWIT G REG OR APP TION TCHING GULATO PLICATFeeatures BVDDS=8800V @Tjmax Low gate c = .) charge: Qg=19nC (Typ.D Low drain-source On resistance: RDS(on)=4.22 (Max.) RoHS com ce mpliant devic Halogen fre e ee packageG Or nformatiordering In on S Part Num Marking Packagember g TO-252 STK

Datasheet: SMN04L20D , SMN04L20IS , SMN0665F , SMN09L20D , SMN18T50FD , SMNY2Z30 , STK0170 , STK0380D , IRF2807 , STK730F , STK830D , STK830F , STK830P , SUN0260D , SUN0260F , SUN0460D , SUN0460F .

History: SI1012X | STK0170 | SI4465ADY-T1-E3 | LSB60R180HT | CS7N65A4R

Keywords - STK0380F MOSFET datasheet

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