STK830F MOSFET Datasheet: N-Ch, 500V, 4.5A. Full specification with pinout and replacement list

STK830F Specs and Replacement

Type Designator: STK830F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 46 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-220F

STK830F substitution

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STK830F datasheet

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STK830F Semiconductor Semiconductor Power MOSFET SWITCHING REGULATOR APPLICATIONS Features High Voltage BVDSS=500V(Min.) Low Crss Crss=8.4pF(Typ.) Low gate charge Qg=17nC(Typ.) Low RDS(on) RDS(on)=1.5 (Max.) Ordering Information Type NO. Marking Package Code STK830F STK830 TO-220F-3L Outline Dimensions unit mm 3.05 3.35 9.80 10.20 2.... See More ⇒

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STK830D Semiconductor Semiconductor Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS PIN Connection Features D High Voltage BVDSS=500V(Min.) Low Crss Crss=10pF(Typ.) D Low gate charge Qg=17nC(Typ.) Low RDS(on) RDS(on)=1.5 (Max.) G Ordering Information G D S S Type No. Marking Package Code TO-252 STK830D STK830 TO-252 A... See More ⇒

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STK830P Semiconductor Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features High Voltage BVDSS=500V(Min.) Low Crss Crss=8.4pF(Typ.) Low gate charge Qg=17nC(Typ.) Low RDS(on) RDS(on)=1.5 (Max.) Ordering Information Type NO. Marking Package Code STK830P STK830 TO-220AB-3L Outline Dimensions unit mm 3.90 Max. 1.17 1... See More ⇒

Detailed specifications: SMN09L20D, SMN18T50FD, SMNY2Z30, STK0170, STK0380D, STK0380F, STK730F, STK830D, 18N50, STK830P, SUN0260D, SUN0260F, SUN0460D, SUN0460F, SUN0460I2, SUN0465F, SUN0465I2