FRM9240H MOSFET. Datasheet pdf. Equivalent
Type Designator: FRM9240H
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 132 nS
Maximum Drain-Source On-State Resistance (Rds): 0.72 Ohm
Package: TO204AA
FRM9240H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FRM9240H Datasheet (PDF)
3.1. frm9240.pdf 
Size:47K _intersil
FRM9240D, FRM9240R, FRM9240H 7A, -200V, 0.720 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package • 7A, -200V, RDS(on) = 0.720Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(S
5.1. frm9230.pdf Size:57K _intersil
FRM9230D, FRM9230R, FRM9230H 4A, -200V, 1.30 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package • 4A, -200V, RDS(on) = 1.30Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si)
5.2. frm9250.pdf Size:49K _intersil
FRM9250D, FRM9250R, FRM9250H 16A, -200V, 0.300 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package • 16A, -200V, RDS(on) = 0.300Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD
Datasheet: FRM9130R , FRM9140D , FRM9140H , FRM9140R , FRM9230D , FRM9230H , FRM9230R , FRM9240D , IRF9540 , FRM9240R , FRM9250D , FRM9250H , FRM9250R , FRS130D , FRS130H , FRS130R , FRS140D .
