FRM9250D
MOSFET. Datasheet pdf. Equivalent
Type Designator: FRM9250D
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 16
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 250
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3
Ohm
Package:
TO204AA
FRM9250D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FRM9250D
Datasheet (PDF)
7.1. Size:49K intersil
frm9250.pdf 
FRM9250D, FRM9250R,FRM9250H16A, -200V, 0.300 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETsFeatures Package 16A, -200V, RDS(on) = 0.300TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD
9.1. Size:47K intersil
frm9240.pdf
FRM9240D, FRM9240R,FRM9240H7A, -200V, 0.720 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETsFeatures Package 7A, -200V, RDS(on) = 0.720TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(S
9.2. Size:57K intersil
frm9230.pdf
FRM9230D, FRM9230R,FRM9230H4A, -200V, 1.30 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETsFeatures Package 4A, -200V, RDS(on) = 1.30TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
Datasheet: FRM9140H
, FRM9140R
, FRM9230D
, FRM9230H
, FRM9230R
, FRM9240D
, FRM9240H
, FRM9240R
, K4145
, FRM9250H
, FRM9250R
, FRS130D
, FRS130H
, FRS130R
, FRS140D
, FRS140H
, FRS140R
.
