SUM202MN MOSFET Datasheet: P-Ch, 20V, 3.9A. Full specification with pinout and replacement list

SUM202MN Specs and Replacement

Type Designator: SUM202MN

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: DFN-8

SUM202MN substitution

- MOSFET ⓘ Cross-Reference Search

SUM202MN datasheet

..1. Size:369K auk
sum202mn.pdf pdf_icon

SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 8 This integrated device represents a new level of safety and board-space reduction by combining the 20V P-Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered MOSFET ... See More ⇒

9.1. Size:418K auk
sum201mn.pdf pdf_icon

SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 This integrated device represents a new level of safety and board-space reduction by combining the 20V P-Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered MOSFET portab... See More ⇒

9.2. Size:427K kodenshi
sum201mn.pdf pdf_icon