SUM202MN Datasheet and Replacement
Type Designator: SUM202MN
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: DFN-8
SUM202MN substitution
SUM202MN Datasheet (PDF)
sum202mn.pdf
SUM202MNP-Channel MOSFET + PNP BJTIntegrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 8 This integrated device represents a new level of safety andboard-space reduction by combining the 20V P-Channel FET with a1 PNP Silicon Low VCE(sat) switching transistor. This newly integratedproduct provides higher efficiency and accuracy for battery poweredMOSFET
sum201mn.pdf
SUM201MNP-Channel MOSFET + PNP BJTIntegrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 This integrated device represents a new level of safety andboard-space reduction by combining the 20V P-Channel FET with aPNP Silicon Low VCE(sat) switching transistor. This newly integratedproduct provides higher efficiency and accuracy for battery poweredMOSFET portab
sum201mn.pdf
SUM201MNP-Channel MOSFET + PNP BJTIntegrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 This integrated device represents a new level of safety andboard-space reduction by combining the 20V P-Channel FET with aPNP Silicon Low VCE(sat) switching transistor. This newly integratedproduct provides higher efficiency and accuracy for battery poweredMOSFET portab
Datasheet: STJ009 , STK001SF , STK003SF , STK004SF , SUF1002 , SUF2001 , SUF3001 , SUM201MN , IRFP460 , 8N90 , 9N90 , 10N90 , 11N90 , 12N90 , 9N95 , 9N100 , 1N90 .
History: AO3456 | MMBFJ175 | SIHD4N80E | IPC100N04S5L-2R6
Keywords - SUM202MN MOSFET datasheet
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History: AO3456 | MMBFJ175 | SIHD4N80E | IPC100N04S5L-2R6
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