All MOSFET. 10N90 Datasheet

 

10N90 MOSFET. Datasheet pdf. Equivalent

Type Designator: 10N90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 183 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 54 nS

Drain-Source Capacitance (Cd): 245 pF

Maximum Drain-Source On-State Resistance (Rds): 1.15 Ohm

Package: TO-247_TO-3P

10N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

10N90 Datasheet (PDF)

1.1. ssh10n90a.pdf Size:205K _samsung

10N90
10N90

SSH10N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 0.938 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characterist

1.2. ssf10n90a.pdf Size:579K _samsung

10N90
10N90

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 0.938 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

 1.3. ixfh10n90 ixfm10n90 ixfh12n90 ixfm12n90 ixfh13n90 ixfm13n90.pdf Size:179K _ixys

10N90
10N90

VDSS ID25 RDS(on) HiPerFETTM ? IXFH/IXFM 10 N90 900 V 10 A 1.1 ? ? ? ? Power MOSFETs ? IXFH/IXFM 12 N90 900 V 12 A 0.9 ? ? ? ? ? IXFH/IXFT 13 N90 900 V 13 A 0.8 ? ? ? ? N-Channel Enhancement Mode ? ? 250 ns ? ? High dv/dt, Low trr, HDMOSTM Family trr ? TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 900 V VDGR TJ = 25C to 150C; RGS = 1

1.4. ixth10n90 ixtm10n90 ixth12n90 ixtm12n90.pdf Size:299K _ixys

10N90
10N90



 1.5. 10n90.pdf Size:200K _utc

10N90
10N90

UNISONIC TECHNOLOGIES CO., LTD 10N90 Power MOSFET 10A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC10N90 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche

1.6. aotf10n90.pdf Size:296K _aosemi

10N90
10N90

AOTF10N90 900V, 10A N-Channel MOSFET General Description Product Summary VDS 1000V@150℃ The AOTF10N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 10A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V) < 0.98Ω DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed

1.7. aok10n90.pdf Size:292K _aosemi

10N90
10N90

AOK10N90 900V,10A N-Channel MOSFET General Description Product Summary VDS 1000@150℃ The AOK10N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 10A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.98Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

1.8. sdf10n90.pdf Size:159K _solitron

10N90



1.9. ssf10n90f1.pdf Size:333K _silikron

10N90
10N90

SSF10N90F1 Main Product Characteristics: V 900V DSS R (on) 0.85Ω(typ.) DS I 10A ① D Marking and pin TO-3P Schematic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Low On Resistance  Low Gate Charge  Fast switching and reverse body recovery Description: It utilizes the latest processing techniques to achieve the high cell density a

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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