All MOSFET. 10N90 Datasheet

 

10N90 MOSFET. Datasheet pdf. Equivalent

Type Designator: 10N90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 183 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 54 nS

Drain-Source Capacitance (Cd): 245 pF

Maximum Drain-Source On-State Resistance (Rds): 1.15 Ohm

Package: TO-247, TO-3P

10N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

10N90 Datasheet (PDF)

1.1. 10n90a.pdf Size:37K _update-mosfet

10N90
10N90

2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAFX10N90A Features 900 Volts • Ultrafast body diode 10 Amps • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability 1.1 • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance N-CHANNEL • Rev

1.2. msafx10n90a.pdf Size:37K _update-mosfet

10N90
10N90

2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAFX10N90A Features 900 Volts • Ultrafast body diode 10 Amps • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability 1.1 • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance N-CHANNEL • Rev

 1.3. ssh10n90a.pdf Size:205K _samsung

10N90
10N90

SSH10N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low RDS(ON) : 0.938 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Char

1.4. ssf10n90a.pdf Size:579K _samsung

10N90
10N90

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low RDS(ON) : 0.938 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

 1.5. ixth10n90 ixtm10n90 ixth12n90 ixtm12n90.pdf Size:299K _ixys

10N90
10N90



1.6. ixfh10n90 ixfm10n90 ixfh12n90 ixfm12n90 ixfh13n90 ixfm13n90.pdf Size:179K _ixys

10N90
10N90

VDSS ID25 RDS(on) HiPerFETTM Ω IXFH/IXFM 10 N90 900 V 10 A 1.1 Ω Ω Ω Ω Power MOSFETs Ω IXFH/IXFM 12 N90 900 V 12 A 0.9 Ω Ω Ω Ω Ω IXFH/IXFT 13 N90 900 V 13 A 0.8 Ω Ω Ω Ω N-Channel Enhancement Mode ≤ ≤ 250 ns ≤ ≤ High dv/dt, Low trr, HDMOSTM Family trr ≤ TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 1

1.7. 10n90.pdf Size:200K _utc

10N90
10N90

UNISONIC TECHNOLOGIES CO., LTD 10N90 Power MOSFET 10A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC10N90 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalan

1.8. 10n90a msafx10n90a.pdf Size:37K _microsemi

10N90
10N90

2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAFX10N90A Features 900 Volts • Ultrafast body diode 10 Amps • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability 1.1 • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance N-CHANNEL • Rev

1.9. aotf10n90.pdf Size:296K _aosemi

10N90
10N90

AOTF10N90 900V, 10A N-Channel MOSFET General Description Product Summary VDS 1000V@150℃ The AOTF10N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 10A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V) < 0.98Ω DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed

1.10. aok10n90.pdf Size:292K _aosemi

10N90
10N90

AOK10N90 900V,10A N-Channel MOSFET General Description Product Summary VDS 1000@150℃ The AOK10N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 10A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.98Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

1.11. sdf10n90.pdf Size:159K _solitron

10N90



1.12. ssf10n90f1.pdf Size:333K _silikron

10N90
10N90

SSF10N90F1 Main Product Characteristics: V 900V DSS R (on) 0.85Ω(typ.) DS I 10A ① D Marking and pin TO-3P Schematic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Low On Resistance  Low Gate Charge  Fast switching and reverse body recovery Description: It utilizes the latest processing techniques to achieve the high cell density a

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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