9N95 MOSFET. Datasheet pdf. Equivalent
Type Designator: 9N95
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 160 W
Maximum Drain-Source Voltage |Vds|: 950 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 45 nC
Rise Time (tr): 120 nS
Drain-Source Capacitance (Cd): 175 pF
Maximum Drain-Source On-State Resistance (Rds): 1.05 Ohm
Package: TO-247
9N95 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
9N95 Datasheet (PDF)
9n95.pdf
UNISONIC TECHNOLOGIES CO., LTD 9N95 Power MOSFET 9A, 950V N-CHANNEL POWER MOSFET DESCRIPTION 1The UTC 9N95 uses UTCs advanced proprietary, planar TO-247stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 1.4 @VGS
cs9n95f cs9n95w.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS9N95F,CS9N95W950V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS9N95F TO-220F CS9N95FCS9N95
sfp062n95c3 sfb059n95c3.pdf
SFP062N95C3,SFB059N95C3 N-MOSFET 95V, 5.2m, 120AFeaturesProduct Summary Extremely low on-resistance RDS(on) VDS95V Excellent gate charge x RDS(on) product(FOM)RDS(on) typ. 5.2mID120AApplication100% DVDS Tested Motor Drives100% Avalanche Tested SR (Synchronous rectification) DC/DC converter General purpose applicationsSFP062N95C3 SFB059N9
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , IRFP250 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: HSP0016
History: HSP0016
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