All MOSFET. 1N65A Datasheet

 

1N65A MOSFET. Datasheet pdf. Equivalent

Type Designator: 1N65A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 3 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 0.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 11 nS

Drain-Source Capacitance (Cd): 20 pF

Maximum Drain-Source On-State Resistance (Rds): 11.5 Ohm

Package: TO-92

1N65A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

1N65A Datasheet (PDF)

1.1. cs1n65a1.pdf Size:540K _update_mosfet

1N65A
1N65A

Silicon N-Channel Power MOSFET R ○ CS1N65 A1 General Description: VDSS 650 V CS1N65 A1, the silicon N-channel Enhanced ID 0.8 A PD (TC=25℃) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

1.2. cs1n65a3.pdf Size:533K _update_mosfet

1N65A
1N65A

Silicon N-Channel Power MOSFET R ○ CS1N65 A3 General Description: VDSS 650 V CS1N65 A3, the silicon N-channel Enhanced ID 0.8 A PD (TC=25℃) 20 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 1.3. 1n65a.pdf Size:212K _utc

1N65A
1N65A

UNISONIC TECHNOLOGIES CO., LTD 1N65A Power MOSFET 0.5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65A is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power suppl

1.4. ceu01n65a ced01n65a.pdf Size:393K _cet

1N65A
1N65A

CED01N65A/CEU01N65A N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.9A, RDS(ON) = 15? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless other

 1.5. cek01n65a.pdf Size:369K _cet

1N65A
1N65A

CEK01N65A N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.3A, RDS(ON) = 15 ? @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package. G G D G S D S TO-92(Ammopack) TO-92(Bulk) S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Unit

Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .

 
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