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6N60Z Spec and Replacement


   Type Designator: 6N60Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220F

 6N60Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

6N60Z Specs

 ..1. Size:220K  utc
6n60z.pdf pdf_icon

6N60Z

UNISONIC TECHNOLOGIES CO., LTD 6N60Z Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in... See More ⇒

 0.1. Size:133K  1
ndf06n60z ndp06n60z.pdf pdf_icon

6N60Z

NDF06N60Z, NDP06N60Z N-Channel Power MOSFET 0.98 W, 600 Volts Features Low ON Resistance Low Gate Charge http //onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS Compliant VDSS RDS(ON) (TYP) @ 3 A Applications 600 V 0.98 Adapter (Notebook, Printer, Gaming) LCD Panel Power N-Channel Lighting Ballasts D (2) ABSOLUTE MAXIMUM RA... See More ⇒

 0.2. Size:525K  fairchild semi
fdp6n60zu fdpf6n60zut.pdf pdf_icon

6N60Z

April 2009 UniFETTM FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET, FRFET 600V, 4.5A, 2 Features Description RDS(on) = 1.7 ( Typ.) @ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 14.5nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology... See More ⇒

 0.3. Size:112K  onsemi
ndf06n60z ndp06n60z.pdf pdf_icon

6N60Z

NDF06N60Z, NDP06N60Z N-Channel Power MOSFET 600 V, 1.2 W Features Low ON Resistance Low Gate Charge http //onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS RDS(ON) (MAX) @ 3 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 600 V 1.2 ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) Rating Symbol NDF NDP Unit... See More ⇒

Detailed specifications: 4N65 , 4N65Z , 4N65K , 5N65 , 5N65K , 6N65 , 5N60 , 6N60 , IRLB3034 , 7N60A , 7N60 , 7N60Z , 7N60K , 8N60 , 10N60 , 10N60K , 12N60 .

History: 2N6794SM

Keywords - 6N60Z MOSFET specs

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