All MOSFET. 6N60Z Datasheet


6N60Z MOSFET. Datasheet pdf. Equivalent

Type Designator: 6N60Z

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 6.2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 95 nS

Drain-Source Capacitance (Cd): 95 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO-220F

6N60Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search


6N60Z Datasheet (PDF)

1.1. fdp6n60zu fdpf6n60zut.pdf Size:525K _fairchild_semi


April 2009 UniFETTM FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET, FRFET 600V, 4.5A, 2? Features Description • RDS(on) = 1.7? ( Typ.) @ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 14.5nC) stripe, DMOS technology. • Low Crss ( Typ. 5pF) This advanced technology has been esp

1.2. ndf06n60z ndp06n60z.pdf Size:112K _onsemi


NDF06N60Z, NDP06N60Z N-Channel Power MOSFET 600 V, 1.2 W Features • Low ON Resistance • Low Gate Charge • ESD Diode-Protected Gate • 100% Avalanche Tested VDSS RDS(ON) (MAX) @ 3 A • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 600 V 1.2 ? ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol NDF NDP Unit N-Channel Dr

 1.3. 6n60z.pdf Size:220K _utc


UNISONIC TECHNOLOGIES CO., LTD 6N60Z Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swit

Datasheet: 4N65 , 4N65Z , 4N65K , 5N65 , 5N65K , 6N65 , 5N60 , 6N60 , APT50M38JLL , 7N60A , 7N60 , 7N60Z , 7N60K , 8N60 , 10N60 , 10N60K , 12N60 .

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