6N60Z Datasheet. Specs and Replacement

Type Designator: 6N60Z  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 95 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-220F

  📄📄 Copy 

6N60Z substitution

- MOSFET ⓘ Cross-Reference Search

 

6N60Z datasheet

 ..1. Size:220K  utc
6n60z.pdf pdf_icon

6N60Z

UNISONIC TECHNOLOGIES CO., LTD 6N60Z Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in... See More ⇒

 0.1. Size:133K  1
ndf06n60z ndp06n60z.pdf pdf_icon

6N60Z

NDF06N60Z, NDP06N60Z N-Channel Power MOSFET 0.98 W, 600 Volts Features Low ON Resistance Low Gate Charge http //onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS Compliant VDSS RDS(ON) (TYP) @ 3 A Applications 600 V 0.98 Adapter (Notebook, Printer, Gaming) LCD Panel Power N-Channel Lighting Ballasts D (2) ABSOLUTE MAXIMUM RA... See More ⇒

 0.2. Size:525K  fairchild semi
fdp6n60zu fdpf6n60zut.pdf pdf_icon

6N60Z

April 2009 UniFETTM FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET, FRFET 600V, 4.5A, 2 Features Description RDS(on) = 1.7 ( Typ.) @ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 14.5nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology... See More ⇒

 0.3. Size:112K  onsemi
ndf06n60z ndp06n60z.pdf pdf_icon

6N60Z

NDF06N60Z, NDP06N60Z N-Channel Power MOSFET 600 V, 1.2 W Features Low ON Resistance Low Gate Charge http //onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS RDS(ON) (MAX) @ 3 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 600 V 1.2 ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) Rating Symbol NDF NDP Unit... See More ⇒

Detailed specifications: 4N65, 4N65Z, 4N65K, 5N65, 5N65K, 6N65, 5N60, 6N60, IRLB3034, 7N60A, 7N60, 7N60Z, 7N60K, 8N60, 10N60, 10N60K, 12N60

Keywords - 6N60Z MOSFET specs

 6N60Z cross reference

 6N60Z equivalent finder

 6N60Z pdf lookup

 6N60Z substitution

 6N60Z replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility