All MOSFET. 7N60A Datasheet

 

7N60A MOSFET. Datasheet pdf. Equivalent

Type Designator: 7N60A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 65 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 60 nS

Drain-Source Capacitance (Cd): 85 pF

Maximum Drain-Source On-State Resistance (Rds): 0.93 Ohm

Package: TO-220_TO-220F_TO-220F1

7N60A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

7N60A Datasheet (PDF)

1.1. cs7n60a7hd.pdf Size:348K _update_mosfet

7N60A
7N60A

Silicon N-Channel Power MOSFET R ○ CS7N60 A7HD General Description: VDSS 600 V CS7N60 A7HD, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.2. cs7n60a8hd.pdf Size:352K _update_mosfet

7N60A
7N60A

Silicon N-Channel Power MOSFET R ○ CS7N60 A8HD General Description: VDSS 600 V CS7N60 A8HD, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 1.3. hgtp7n60a4 hgtg7n60a4 hgt1s7n60a4.pdf Size:173K _fairchild_semi

7N60A
7N60A

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7A are MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5A the best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capability devices have the high i

1.4. ssh17n60a.pdf Size:944K _samsung

7N60A
7N60A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.45 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 0.356 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Unit

 1.5. ssw7n60a.pdf Size:505K _samsung

7N60A
7N60A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 1.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V 2 Lower RDS(ON) : 0.977 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristi

1.6. sss7n60a.pdf Size:504K _samsung

7N60A
7N60A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 1.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 0.977 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.7. ssp7n60a.pdf Size:581K _samsung

7N60A
7N60A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 1.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 0.977 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.8. ssh7n60a.pdf Size:912K _samsung

7N60A
7N60A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 1.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 7.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 0.977 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Unit

1.9. 7n60a.pdf Size:260K _utc

7N60A
7N60A

UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well suited

1.10. fsa07n60a.pdf Size:243K _inpower_semi

7N60A
7N60A

FSA07N60A N-Channel MOSFET Pb Lead Free Package and Finish Applications: VDSS RDS(ON) (Max.) ID • Adaptor • Charger 600 V 1.25 Ω 7.0 A • SMPS Standby Power Features: • RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve • ESD improved Capability G DS TO-220F Ordering Information PART NUMBER PACKAGE BRAND Packages FSA07N6

Datasheet: 4N65Z , 4N65K , 5N65 , 5N65K , 6N65 , 5N60 , 6N60 , 6N60Z , 2N5485 , 7N60 , 7N60Z , 7N60K , 8N60 , 10N60 , 10N60K , 12N60 , 15N60 .

 
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