UF601 Datasheet and Replacement
Type Designator: UF601
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.5 V
|Id| ⓘ - Maximum Drain Current: 0.185 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 7.6 nC
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 3000 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 600 Ohm
Package: SOT-23
UF601 substitution
UF601 Datasheet (PDF)
uf601.pdf

UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed. FEATURES * RDS(ON)
Datasheet: 8N60 , 10N60 , 10N60K , 12N60 , 15N60 , 18N60 , 20N60 , 22N60 , BS170 , UK2996 , 1N60A , 1N60 , 1N60P , 1N60Z , 2N60L , 2N60 , 2N60K .
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