UF601 MOSFET. Datasheet pdf. Equivalent
Type Designator: UF601
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 0.185 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.6 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 3000 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 600 Ohm
Package: SOT-23
UF601 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UF601 Datasheet (PDF)
uf601.pdf
UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed. FEATURES * RDS(ON)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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