All MOSFET. 1N60A Datasheet

 

1N60A MOSFET. Datasheet pdf. Equivalent

Type Designator: 1N60A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 34 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 0.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 11 nS

Drain-Source Capacitance (Cd): 20 pF

Maximum Drain-Source On-State Resistance (Rds): 11 Ohm

Package: TO-251, TO-252, TO-92

1N60A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

1N60A Datasheet (PDF)

1.1. irfu1n60a.pdf Size:269K _upd

1N60A
1N60A

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (Max.) (Ω)VGS = 10 V 7.0 • Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 14 Requirement Qgs (nC) 2.7 • Improved Gate, Avalanche and Dynamic Qgd (nC) 8.1 dV/dt Ruggedness Configuration Sing

1.2. irfu1n60apbf.pdf Size:231K _upd

1N60A
1N60A

PD - 95518A SMPS MOSFET IRFR1N60APbF IRFU1N60APbF Applications HEXFET® Power MOSFET l Switch Mode Power Supply (SMPS) VDSS Rds(on) max ID l Uninterruptable Power Supply l Power Factor Correction 600V 7.0Ω 1.4A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance

 1.3. sihfr1n60a sihfu1n60a.pdf Size:269K _upd-mosfet

1N60A
1N60A

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (Max.) (Ω)VGS = 10 V 7.0 • Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 14 Requirement Qgs (nC) 2.7 • Improved Gate, Avalanche and Dynamic Qgd (nC) 8.1 dV/dt Ruggedness Configuration Sing

1.4. irfr1n60apbf.pdf Size:231K _upd-mosfet

1N60A
1N60A

PD - 95518A SMPS MOSFET IRFR1N60APbF IRFU1N60APbF Applications HEXFET® Power MOSFET l Switch Mode Power Supply (SMPS) VDSS Rds(on) max ID l Uninterruptable Power Supply l Power Factor Correction 600V 7.0Ω 1.4A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance

 1.5. l1n60a l1n60f l1n60i.pdf Size:212K _update_mosfet

1N60A
1N60A

LESHAN RADIO COMPANY, LTD. L1N60 1.0 Amps, 600 Volts N-CHANNEL MOSFET 1 2 3 TO-251-3L DESCRIPTION The LRC L1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate 1 charge, low on-state resistance and have a high rugged avalanche 2 3 TO-220F-3L characteristics. This power MOSFET is usually used at high speed sw

1.6. cs1n60a3h.pdf Size:532K _update_mosfet

1N60A
1N60A

Silicon N-Channel Power MOSFET R ○ CS1N60 A3H General Description: VDSS 600 V CS1N60 A3H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25℃) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.7. cs1n60a1h.pdf Size:537K _update_mosfet

1N60A
1N60A

Silicon N-Channel Power MOSFET R ○ CS1N60 A1H General Description: VDSS 600 V CS1N60 A1H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25℃) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.8. sw1n60a.pdf Size:481K _update-mosfet

1N60A
1N60A

SAMWIN SW1N60A N-channel MOSFET BVDSS : 600V Features TO-92 ID : 0.8A ■ High ruggedness RDS(ON) : 15ohm ■ RDS(ON) (Max 15 Ω)@VGS=10V ■ Gate Charge (Typical 6nC) ■ Improved dv/dt Capability 1 2 ■ 100% Avalanche Tested 2 3 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enab

1.9. 1n60af 1n60e 1n60f 1n60g.pdf Size:596K _update-mosfet

1N60A
1N60A

RoHS 1N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (1.2A, 600Volts) DESCRIPTION The Nell 1N60 is a three-terminal silicon D D device with current conduction capability of 1.2A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. G They are designed for use in applications suc

1.10. blv1n60a.pdf Size:476K _update-mosfet

1N60A
1N60A

 BLV1N60A N-channel Enhancement Mode Power MOSFET 600V DSS • Avalanche Energy Specified BV • Fast Switching RDS(ON) 15Ω Ω Ω Ω • Simple Drive Requirements ID 0.5A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unle

1.11. irfr1n60a.pdf Size:181K _international_rectifier

1N60A
1N60A

PD - 91846B SMPS MOSFET IRFR1N60A IRFU1N60A Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) VDSS Rds(on) max ID l Uninterruptable Power Supply l Power Factor Correction 600V 7.0? 1.4A Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage a

1.12. irfr1n60apbf irfu1n60apbf.pdf Size:257K _international_rectifier

1N60A
1N60A

PD - 95518A SMPS MOSFET IRFR1N60APbF IRFU1N60APbF Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) VDSS Rds(on) max ID l Uninterruptable Power Supply l Power Factor Correction 600V 7.0? 1.4A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and

1.13. ssp1n60a.pdf Size:931K _samsung

1N60A
1N60A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 12 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Low RDS(ON) : 9.390 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VD

1.14. ssw1n60a.pdf Size:503K _samsung

1N60A
1N60A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 12 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V 2 Low RDS(ON) : 9.390 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V

1.15. ssr1n60a.pdf Size:502K _samsung

1N60A
1N60A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 12 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 0.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Low RDS(ON) : 9.390 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

1.16. irfr1n60a irfu1n60a sihfr1n60a sihfu1n60a.pdf Size:244K _vishay

1N60A
1N60A

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (Max.) (?)VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 14 Requirement Qgs (nC) 2.7 Improved Gate, Avalanche and Dynamic Qgd (nC) 8.1 dV/dt Ruggedness Configuration Single Full

1.17. 1n60a.pdf Size:218K _utc

1N60A
1N60A

UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in pow

1.18. mtn1n60a3.pdf Size:310K _cystek

1N60A
1N60A

Spec. No. : C721A3 Issued Date : 2010.10.18 CYStech Electronics Corp. Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 8Ω (typ.) MTN1N60A3 ID : 1A Description The MTN1N60A3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

1.19. fsn01n60a.pdf Size:249K _inpower_semi

1N60A
1N60A

FSN01N60A N-Channel MOSFET Pb Lead Free Package and Finish Applications: VDSS RDS(ON) (Typ.) ID • Adaptor • TV Main Power 600 V 7.0 Ω 1.5 A • SMPS Power Supply • LCD Panel Power Features: • RoHS Compliant • Low ON Resistance • Low Gate Charge • ESD improved Capability G DS TO-92 Ordering Information PART NUMBER PACKAGE BRAND Packages FSN01N60A TO-92 01N60A

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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