2N60L MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N60L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 54 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 2 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 30 pF
Maximum Drain-Source On-State Resistance (Rds): 4.2 Ohm
Package: TO-262_TO-251_TO-252_TO-220_TO-220F_TO-126
2N60L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N60L Datasheet (PDF)
1.1. 2n60l.pdf 
Size:216K _utc
UNISONIC TECHNOLOGIES CO., LTD 2N60L Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power
1.2. kf2n60l.pdf Size:1007K _kec
KF2N60L SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description B D DIM MILLIMETERS This planar stripe MOSFET has better characteristics, such as fast A 7.20 MAX switching time, low on resistance, low gate charge and excellent B 5.20 MAX C 0.60 MAX avalanche characteristics. It is mainly suitable for switching mode P D 2.50 MAX DEPTH:0.2 E 1.15 MAX
Datasheet: 20N60 , 22N60 , UF601 , UK2996 , 1N60A , 1N60 , 1N60P , 1N60Z , BS170 , 2N60 , 2N60K , 3N60 , 3N60A , 3N60Z , 3N60K , 4N60 , 4N60Z .
