All MOSFET. 2N60K Datasheet

 

2N60K MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N60K

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 54 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 40 pF

Maximum Drain-Source On-State Resistance (Rds): 4.2 Ohm

Package: TO-220_TO-92_TO-251_TO-252_TO-220F

2N60K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N60K Datasheet (PDF)

1.1. sihfp22n60k.pdf Size:177K _upd-mosfet

2N60K
2N60K

IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ()VGS = 10 V 0.24 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 150 COMPLIANT Ruggedness Qgs (nC) 45 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 76 and Current Co

1.2. irfp22n60k irfp22n60kpbf.pdf Size:177K _upd-mosfet

2N60K
2N60K

IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ()VGS = 10 V 0.24 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 150 COMPLIANT Ruggedness Qgs (nC) 45 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 76 and Current Co

 1.3. irfp22n60k.pdf Size:123K _international_rectifier

2N60K
2N60K

PD - 94414 IRFP22N60K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID l Hard Switching Primary or PFS Switch 600V 240m? 22A l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Char

1.4. 2n60k.pdf Size:220K _utc

2N60K
2N60K

UNISONIC TECHNOLOGIES CO., LTD 2N60K Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 2N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

Datasheet: UF601 , UK2996 , 1N60A , 1N60 , 1N60P , 1N60Z , 2N60L , 2N60 , IRF640 , 3N60 , 3N60A , 3N60Z , 3N60K , 4N60 , 4N60Z , 4N60K , 8N50H .

 
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