7N50 PDF and Equivalents Search

 ..1. Size:174K  utc
 7n50.pdf

UNISONIC TECHNOLOGIES CO., LTD 7N50 Preliminary Power MOSFET 7A, 500V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 7N50 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand 1 high e... See More ⇒

 0.1. Size:295K  1
 ste47n50.pdf

www.DataSheet4U.com ... See More ⇒

 0.2. Size:189K  international rectifier
 irfb17n50lpbf.pdf

PD - 95123 IRFB17N50LPbF SMPS MOSFET HEXFET Power MOSFET AppIications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply VDSS RDS(on) typ. ID l High Speed Power Switching 500V 0.28 16A l ZVS and High Frequency Circuit l PWM Inverters l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Rugged... See More ⇒

 0.3. Size:197K  international rectifier
 irfib7n50apbf.pdf

PD - 94805 SMPS MOSFET IRFIB7N50APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.52 6.6A High speed power switching High Voltage Isolation = 2.5KVRMS Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness G D S Ful... See More ⇒

 0.4. Size:153K  international rectifier
 irfps37n50apbf.pdf

PD- 95142 IRFPS37N50APbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 500V 0.13 36A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalan... See More ⇒

 0.5. Size:219K  international rectifier
 irfib7n50lpbf.pdf

PD - 95750 IRFIB7N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications Trr typ. Zero Voltage Switching SMPS VDSS RDS(on) typ. ID Telecom and Server Power Supplies 500V 320m 85ns 6.8A Uninterruptible Power Supplies Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. ... See More ⇒

 0.6. Size:25K  international rectifier
 irfc37n50a.pdf

PD- TBD IRFC37N50A HEXFET Power MOSFET Die in Wafer Form D 500 V Size 7.3 RDS(on) = 0.141 G 5" Wafer S Electrical Characteristics (Wafer Form) Parameter Description Guaranteed (Min/Max) Test Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500V Min. VGS = 0V, ID = 250 A RDS(on) Static Drain-to-Source On-Resistance 0.141 Max. VGS = 10V, ID = 20A VGS(th) Gate Threshold... See More ⇒

 0.7. Size:118K  international rectifier
 irfp17n50ls.pdf

PD - 94351 IRFP17N50LS SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply (SMPS) VDSS RDS(on) typ. Trr ID Uninterruptible Power Supply High Speed Power Switching 500V 0.28 170ns 16A ZVS and High Frequency Circuit PWM Inverters Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully... See More ⇒

 0.8. Size:115K  international rectifier
 irfps37n50a.pdf

PD- 91822C SMPS MOSFET IRFPS37N50A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 0.13 36A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curre... See More ⇒

 0.9. Size:82K  international rectifier
 irfb17n50l.pdf

PD - 94084A IRFB17N50L SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply (SMPS) VDSS RDS(on) typ. ID Uninterruptible Power Supply High Speed Power Switching 500V 0.28 16A ZVS and High Frequency Circuit PWM Inverters Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Character... See More ⇒

 0.10. Size:91K  international rectifier
 irfp17n50l.pdf

PD - 94322 IRFP17N50L SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply (SMPS) RDS(on) typ. Trr typ. ID VDSS Zero Voltage Switching (ZVS) and High 500V 0.28 170ns 16A Frequency Circuit Uninterruptible Power Supply High Speed Power Switching PWM Inverters Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and D... See More ⇒

 0.11. Size:208K  international rectifier
 irfp17n50lpbf.pdf

PD - 95662 IRFP17N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 500V 0.28 170ns 16A Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications.... See More ⇒

 0.12. Size:29K  international rectifier
 irfbl17n50l.pdf

PD- 93929 PROVISIONAL IRFBL17N50L SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) ID Telecom and Data-Com off-Line SMPS Motor Control 500V 0.28 17A UninterruptIble Power Supply Benefits Low On-Resistance High Speed Switching Low Gate Drive Current Due to Improved Gate Charge Characteristics Built in Fast Recovery Diode Improved Avalanche Ruggedness and D... See More ⇒

 0.13. Size:96K  international rectifier
 irfib7n50a.pdf

PD - 91810 SMPS MOSFET IRFIB7N50A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.52 6.6A High speed power switching High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capaci... See More ⇒

 0.14. Size:412K  st
 stb47n50dm6ag.pdf

STB47N50DM6AG Datasheet Automotive-grade N-channel 500 V, 61 m typ., 38 A MDmesh DM6 Power MOSFET in a D PAK package Features TAB VDS RDS(on) max. ID Order code STB47N50DM6AG 500 V 71 m 38 A 2 3 1 AEC-Q101 qualified D PAK Fast-recovery body diode Lower RDS(on) per area vs previous generation Low gate charge, input capacitance and resistance D(2, TAB)... See More ⇒

 0.15. Size:425K  st
 sthi07n50-fi.pdf

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 0.16. Size:1019K  fairchild semi
 fdp7n50 fdpf7n50.pdf

April 2007 TM UniFET FDP7N50/FDPF7N50 500V N-Channel MOSFET Features Description 7A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 12.8 nC) stripe, DMOS technology. Low Crss ( typical 9 pF) This advanced technology has been especially tailo... See More ⇒

 0.17. Size:180K  fairchild semi
 fdh27n50.pdf

August 2002 FDH27N50 27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET Applications Features Low Gate Charge Qg results in Simple Drive Require- Switch Mode Power Supplies(SMPS), such as ment PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward Converter Ruggedness Single Switch Forward Converter Reduced rDS(ON) Flyback Converte... See More ⇒

 0.18. Size:154K  fairchild semi
 mtm7n45 mtm7n50.pdf

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 0.19. Size:375K  fairchild semi
 fdpf7n50 fdpf7n50f.pdf

March 2007 TM UniFET FDP7N50/FDPF7N50 500V N-Channel MOSFET Features Description 7A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 12.8 nC) stripe, DMOS technology. Low Crss ( typical 9 pF) This advanced technology has been especially tailo... See More ⇒

 0.20. Size:1264K  fairchild semi
 fdpf7n50u.pdf

November 2013 FDPF7N50U / FDPF7N50U_G N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 5 A, 1.5 Features Description RDS(on) = 1.5 (Max.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. This Low Gate Charge (Typ. 12.8 nC) MOSFET is tailored to reduce on-state resistance, and ... See More ⇒

 0.21. Size:543K  fairchild semi
 fdp7n50f fdpf7n50f.pdf

November 2007 UniFETTM FDP7N50F / FDPF7N50F tm N-Channel MOSFET, FRFET 500V, 6A, 1.15 Features Description RDS(on) = 0.95 ( Typ.)@ VGS = 10V, ID = 3A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 15nC) DMOS technology. Low Crss ( Typ. 6.3pF) This advance technolo... See More ⇒

 0.22. Size:143K  vishay
 irfib7n50a sihfib7n50a.pdf

IRFIB7N50A, SiHFIB7N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness Qg (Max.) (nC) 52 Fully Characterized Capacitance and Qgs (nC) 13 Avalanche Voltage and Current Qgd (nC) 18 E... See More ⇒

 0.23. Size:211K  vishay
 irfb17n50l irfb17n50lpbf sihfb17n50l.pdf

IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.28 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 130 COMPLIANT Ruggedness Qgs (nC) 33 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 59 and Current Co... See More ⇒

 0.24. Size:176K  vishay
 irfp17n50l sihfp17n50l.pdf

IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY SuperFast Body Diode Eliminates the Need VDS (V) 500 Available For External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.28 RoHS* Low Gate Charge Results in Simple Drive Qg (Max.) (nC) 130 COMPLIANT Requirement Qgs (nC) 33 Enhanced dV/dt Capabilities Offer Improved Qgd (nC) 59 Rugg... See More ⇒

 0.25. Size:181K  vishay
 irfp17n50l irfp17n50lpbf sihfp17n50l.pdf

IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY SuperFast Body Diode Eliminates the Need VDS (V) 500 Available For External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.28 RoHS* Low Gate Charge Results in Simple Drive Qg (Max.) (nC) 130 COMPLIANT Requirement Qgs (nC) 33 Enhanced dV/dt Capabilities Offer Improved Qgd (nC) 59 Rugg... See More ⇒

 0.26. Size:178K  vishay
 sihfps37n50a.pdf

IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (Max.) ( )VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 46 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 71 and Cur... See More ⇒

 0.27. Size:871K  vishay
 irfib7n50lpbf.pdf

IRFIB7N50L, SiHFIB7N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Super Fast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications RoHS RDS(on) ( )VGS = 10 V 0.320 Lower Gate Charge Results in Simpler Drive COMPLIANT Qg (Max.) (nC) 92 Reqirements Qgs (nC) 24 Enhanced dV/dt Capabilities Offer Improved Qgd (nC) 44 Ruggedness ... See More ⇒

 0.28. Size:177K  vishay
 irfps37n50a sihfps37n50a.pdf

IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (Max.) ( )VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 46 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 71 and Cur... See More ⇒

 0.29. Size:210K  vishay
 irfb17n50l sihfb17n50l.pdf

IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.28 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 130 COMPLIANT Ruggedness Qgs (nC) 33 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 59 and Current Co... See More ⇒

 0.30. Size:145K  vishay
 sihfib7n50a.pdf

IRFIB7N50A, SiHFIB7N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness Qg (Max.) (nC) 52 Fully Characterized Capacitance and Qgs (nC) 13 Avalanche Voltage and Current Qgd (nC) 18 E... See More ⇒

 0.31. Size:176K  infineon
 irfps37n50a sihfps37n50a.pdf

IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (Max.) ( )VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 46 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 71 and Cur... See More ⇒

 0.32. Size:64K  ixys
 ixtm7n45 ixtm7n45a ixtm7n50 ixtm7n50a ixtp7n45 ixtp7n45a ixtp7n50 ixtp7n50a.pdf

... See More ⇒

 0.33. Size:1295K  onsemi
 fdpf7n50u fdpf7n50u g.pdf

November 2013 FDPF7N50U / FDPF7N50U_G N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 5 A, 1.5 Features Description RDS(on) = 1.5 (Max.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. This Low Gate Charge (Typ. 12.8 nC) MOSFET is tailored to reduce on-state resistance, and ... See More ⇒

 0.34. Size:375K  fuji
 fmv07n50e.pdf

FMV07N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.... See More ⇒

 0.35. Size:397K  fuji
 fmp07n50e.pdf

FMP07N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V) ... See More ⇒

 0.36. Size:407K  fuji
 fmc07n50e.pdf

FMC07N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)... See More ⇒

 0.37. Size:404K  fuji
 fmi07n50e.pdf

FMI07N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)... See More ⇒

 0.38. Size:64K  kec
 kf17n50n.pdf

KF17N50N SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for switching mode _ A + 15.60 0.20 _ B 4.80 + 0.20 power supplies. _ ... See More ⇒

 0.39. Size:1219K  kec
 kf7n50p-f.pdf

KF7N50P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF7N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent DIM avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V, ID= 7... See More ⇒

 0.40. Size:387K  kec
 kf7n50d-i.pdf

KF7N50D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF7N50D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS L C D _ A 6.60 + 0.20 avalanche characteristics. It is mainly suitable for electronic ballast and _ B 6.10 + 0.20 _ C 5.... See More ⇒

 0.41. Size:123K  ssdi
 sff27n50m sff27n50z.pdf

SFF27N50M Solid State Devices, Inc. SFF27N50Z 14701 Firestone Blvd * La Mirada, Ca 90638 Phone (562) 404-4474 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER S DATA SHEET 27 AMP , 500 Volts, 175 m Part Number / Ordering Information 1/ Avalanche Rated N-channel SFF27N50 ___ ___ ___ Screening 2/ MOSFET __ = Not Screene... See More ⇒

 0.42. Size:188K  samhop
 sdf07n50 sdp07n50.pdf

SDP07N50 SDF07N50 a S mHop Microelectronics C orp. Ver 2.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) ( ) Typ VDSS ID Rugged and reliable. 500V 7A 0.76 @ VGS=10V TO-220 and TO-220F Package. D G D S G D S G SDP SERIES SDF SERIES TO-220 TO-220F S ORDERING INFORMATION Ordering Code Package Ma... See More ⇒

 0.43. Size:116K  samhop
 sdf07n50t.pdf

SDF07N50T a S mHop Microelectronics C orp. Ver 2.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Typ Rugged and reliable. 500V 7A 1.2 @ VGS=10V TO-220F Package. D G G D S SDF SERIES TO-220F S ORDERING INFORMATION Ordering Code Package Marking Code Delivery Mode RoHS Status Tube S... See More ⇒

 0.44. Size:1175K  magnachip
 mdf7n50bth mdp7n50bth.pdf

MDP7N50B / MDF7N50B N-Channel MOSFET 500V, 7.0 A, 0.9 General Description Features The MDP/F7N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 7.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.9 @VGS = 10V excellent quality. MDP/F7N50B is suitable device for SMPS, high Applications Speed switching an... See More ⇒

 0.45. Size:1196K  magnachip
 mdp7n50.pdf

MDP7N50 N-Channel MOSFET 500V, 7.0 A, 0.9 General Description Features The MDP7N50 uses advanced Magnachip s V = 500V DS MOSFET Technology, which provides low on- I = 7.0A @V = 10V D GS state resistance, high switching performance R ... See More ⇒

 0.46. Size:595K  samwin
 swf17n50d.pdf

SW17N50D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS 500V High ruggedness Low RDS(ON) (Typ 0.29 )@VGS=10V ID 17A Low Gate Charge (Typ 70nC) RDS(ON) 0.29 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application LED, TV-Power, Charger 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This p... See More ⇒

 0.47. Size:300K  inchange semiconductor
 fdh27n50.pdf

isc N-Channel MOSFET Transistor FDH27N50 FEATURES Drain Current I = 27A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

 0.48. Size:310K  inchange semiconductor
 irfps37n50a.pdf

isc N-Channel MOSFET Transistor IRFPS37N50A FEATURES Drain Current I = 36A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.... See More ⇒

 0.49. Size:284K  inchange semiconductor
 irfb17n50l.pdf

iscN-Channel MOSFET Transistor IRFB17N50L FEATURES Low drain-source on-resistance RDS(ON) =0.32 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒

 0.50. Size:400K  inchange semiconductor
 irfp17n50l.pdf

iscN-Channel MOSFET Transistor IRFP17N50L FEATURES Low drain-source on-resistance RDS(ON) =0.32 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒

 0.51. Size:288K  inchange semiconductor
 mdp7n50th.pdf

isc N-Channel MOSFET Transistor MDP7N50TH FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 0.52. Size:288K  inchange semiconductor
 mdp7n50bth.pdf

isc N-Channel MOSFET Transistor MDP7N50BTH FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.4 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

 0.53. Size:274K  inchange semiconductor
 irfib7n50a.pdf

iscN-Channel MOSFET Transistor IRFIB7N50A FEATURES Low drain-source on-resistance RDS(ON) =0.52 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒

 0.54. Size:1348K  cn apm
 ap7n50d.pdf

AP7N50D 500V N-Channel Enhancement Mode MOSFET Description The AP7N50D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera... See More ⇒