FRS244H Specs and Replacement
Type Designator: FRS244H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.415 Ohm
Package: TO257AA
FRS244H substitution
- MOSFET ⓘ Cross-Reference Search
FRS244H datasheet
frs240.pdf
FRS240D, FRS240R, FRS240H 12A, 200V, 0.255 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Package Features 12A, 200V, RDS(on) = 0.255 TO-257AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End-Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si)... See More ⇒
Detailed specifications: FRS230R, FRS234D, FRS234H, FRS234R, FRS240D, FRS240H, FRS240R, FRS244D, BS170, FRS244R, FRS430D, FRS430H, FRS430R, FRS440D, FRS440H, FRS440R, FRS9130D
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