All MOSFET. 19N10 Datasheet

 

19N10 MOSFET. Datasheet pdf. Equivalent

Type Designator: 19N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 178 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Drain Current |Id|: 15.6 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 150 nS

Drain-Source Capacitance (Cd): 165 pF

Maximum Drain-Source On-State Resistance (Rds): 0.078 Ohm

Package: TO-3P_TO-251_TO-252_TO-220_TO-263

19N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

19N10 Datasheet (PDF)

1.1. fqpf19n10.pdf Size:581K _fairchild_semi

19N10
19N10

August 2000 TM QFET QFET QFET QFET FQPF19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13.6A, 100V, RDS(on) = 0.1? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 32 pF) This advanced technology has been especially t

1.2. fqpf19n10l.pdf Size:616K _fairchild_semi

19N10
19N10

August 2000 TM QFET QFET QFET QFET FQPF19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13.6A, 100V, RDS(on) = 0.1Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 14 nC) planar stripe, DMOS technology. • Low Crss ( typical 35 pF) This advanced technology h

 1.3. fqd19n10ltf fqd19n10ltm.pdf Size:688K _fairchild_semi

19N10
19N10

January 2009 QFET® FQD19N10L / FQU19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 15.6A, 100V, RDS(on) = 0.1Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 14 nC) planar stripe, DMOS technology. • Low Crss ( typical 35 pF) This advanced technology has been

1.4. fqb19n10tm.pdf Size:926K _fairchild_semi

19N10
19N10

October 2008 QFET® FQB19N10 / FQI19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 19A, 100V, RDS(on) = 0.1Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 19 nC) planar stripe, DMOS technology. • Low Crss ( typical 32 pF) This advanced technology has been especially

 1.5. fqb19n10ltm.pdf Size:611K _fairchild_semi

19N10
19N10

August 2000 TM QFET QFET QFET QFET FQB19N10L / FQI19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 19A, 100V, RDS(on) = 0.1Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 14 nC) planar stripe, DMOS technology. • Low Crss ( typical 35 pF) This advanced tec

1.6. fqp19n10.pdf Size:591K _fairchild_semi

19N10
19N10

August 2000 TM QFET QFET QFET QFET FQP19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 19A, 100V, RDS(on) = 0.1Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 19 nC) planar stripe, DMOS technology. • Low Crss ( typical 32 pF) This advanced technology has been es

1.7. fqd19n10l fqu19n10l.pdf Size:688K _fairchild_semi

19N10
19N10

January 2009 QFET FQD19N10L / FQU19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15.6A, 100V, RDS(on) = 0.1? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been especially tai

1.8. fqd19n10tf fqd19n10tm.pdf Size:678K _fairchild_semi

19N10
19N10

January 2009 QFET® FQD19N10 / FQU19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 15.6A, 100V, RDS(on) = 0.1Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 19 nC) planar stripe, DMOS technology. • Low Crss ( typical 32 pF) This advanced technology has been especial

1.9. fqd19n10 fqu19n10.pdf Size:678K _fairchild_semi

19N10
19N10

January 2009 QFET FQD19N10 / FQU19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15.6A, 100V, RDS(on) = 0.1? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 32 pF) This advanced technology has been especially tailored to

1.10. fqp19n10l.pdf Size:626K _fairchild_semi

19N10
19N10

August 2000 TM QFET QFET QFET QFET FQP19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 19A, 100V, RDS(on) = 0.1Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 14 nC) planar stripe, DMOS technology. • Low Crss ( typical 35 pF) This advanced technology has

1.11. 19n10.pdf Size:246K _utc

19N10
19N10

UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and

Datasheet: 2N7002ZT , UF3055 , UTD3055 , 12N06 , 12N06Z , 15N06 , 12N10 , 15N20 , 2SK163 , 22N20 , 25N06 , 25N10 , 30N06 , 50N06 , 60N06 , 60N08 , 6N10 .

 
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