UF1010A MOSFET. Datasheet pdf. Equivalent
Type Designator: UF1010A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 84 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 130 nC
trⓘ - Rise Time: 78 nS
Cossⓘ - Output Capacitance: 690 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO-220
UF1010A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UF1010A Datasheet (PDF)
uf1010a.pdf
UNISONIC TECHNOLOGIES CO., LTD UF1010A Power MOSFET N-CHANNEL POWER MOSFET DESCRIPTION By using high technology, UTC UF1010A has the features, such as low RDS(ON), fast switching and low gate charge. Like features of all power MOSFET devices, UTC UF1010A can satisfy almost all the 1requirements of high efficient devices form customers. TO-220 FEATURES * RDS(ON)
uf1010e.pdf
UNISONIC TECHNOLOGIES CO., LTD UF1010E Power MOSFET N-CHANNEL POWER MOSFET 11 DESCRIPTION Using high technology of UTC, UTC UF1010E has the TO-220 TO-220F1features such as: low RDS(ON), fast switching, and low gate charge.Like features of all power MOSFET devices features, UTC UF1010E can satisfy almost all the requirements of high efficient device form customers. 1
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