UF3710 Datasheet and Replacement
Type Designator: UF3710
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 57 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 410 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO-220
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UF3710 Datasheet (PDF)
uf3710.pdf

UNISONIC TECHNOLOGIES CO., LTD UF3710 Preliminary Power MOSFET 57A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF3710 uses advanced process technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 23m @VGS = 10 V * Ultra low gate c
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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History: GSM3030 | IRF6612



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