UF3710 MOSFET. Datasheet pdf. Equivalent
Type Designator: UF3710
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 57 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 130 nC
trⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 410 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO-220
UF3710 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UF3710 Datasheet (PDF)
uf3710.pdf
UNISONIC TECHNOLOGIES CO., LTD UF3710 Preliminary Power MOSFET 57A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF3710 uses advanced process technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 23m @VGS = 10 V * Ultra low gate c
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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