UF630 MOSFET. Datasheet pdf. Equivalent
Type Designator: UF630
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 73 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 50 nS
Drain-Source Capacitance (Cd): 250 pF
Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm
Package: TO-220_TO-251_TO-252_TO-220F_TO-262
UF630 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UF630 Datasheet (PDF)
1.1. uf630.pdf 
Size:395K _utc
UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET 1 1 TO-220 TO-220F ? DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching 1 1 converters, solenoid, motor drivers, relay drivers. TO-220F1 TO-220F2 ? FEATURES * RDS(O
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