All MOSFET. UF630 Datasheet

 

UF630 MOSFET. Datasheet pdf. Equivalent

Type Designator: UF630

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 73 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 50 nS

Drain-Source Capacitance (Cd): 250 pF

Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm

Package: TO-220, TO-251, TO-252, TO-220F, TO-262

UF630 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UF630 Datasheet (PDF)

1.1. uf630.pdf Size:395K _utc

UF630 UF630

UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET 1 1 TO-220 TO-220F ? DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching 1 1 converters, solenoid, motor drivers, relay drivers. TO-220F1 TO-220F2 ? FEATURES * RDS(O

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