All MOSFET. UF640 Datasheet

 

UF640 MOSFET. Datasheet pdf. Equivalent

Type Designator: UF640

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 139 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 58 nS

Drain-Source Capacitance (Cd): 240 pF

Maximum Drain-Source On-State Resistance (Rds): 0.14 Ohm

Package: TO-263_TO-220_SOT-223_TO-252_TO-220F

UF640 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

UF640 Datasheet (PDF)

1.1. uf640.pdf Size:244K _utc

UF640
UF640

UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET ? DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant and PWM

1.2. ceuf640 cedf640.pdf Size:368K _cet

UF640
UF640

CEDF640/CEUF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 15A, RDS(ON) = 0.15 ? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwis

 

Datasheet: 7N10Z , 80N08 , UF1010A , UF1010E , UF3710 , UF4N20 , UF540 , UF630 , IRF540 , UF6N15 , UF8010 , UFZ44 , URFP150 , UT12N10 , UT2N10 , 12P10 , 7P20 .

 
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