UT2955 Specs and Replacement

Type Designator: UT2955

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.13 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.6 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm

Package: TO-252 SOT-223

UT2955 substitution

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UT2955 datasheet

 ..1. Size:186K  utc
 ut2955.pdf pdf_icon

UT2955

UNISONIC TECHNOLOGIES CO., LTD UT2955 Power MOSFET SINGLE P-CHANNEL POWER MOSFET DESCRIPTION The UT2955 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, converters and power supplies. FEATURES * RDS(ON)... See More ⇒

 0.1. Size:234K  utc
 ut2955g-aa3-r ut2955l-tn3-r ut2955g-tn3-r.pdf pdf_icon

UT2955

UNISONIC TECHNOLOGIES CO., LTD UT2955 Power MOSFET SINGLE P-CHANNEL POWER MOSFET DESCRIPTION The UT2955 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, converters and power supplies. FEATURES * RDS(ON) ... See More ⇒

 0.2. Size:1423K  cn vbsemi
 ut2955g.pdf pdf_icon

UT2955

UT2955G www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symbo... See More ⇒

Detailed specifications: UFZ44, URFP150, UT12N10, UT2N10, 12P10, 7P20, UF9640, UF9Z24, IRF640N, UTT120P06, UTT12P10, UTT16P10, UTT18P10, UTT25P10, UTT50P10, UTT70P10, UTT80P06

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