UT2955 Datasheet and Replacement
Type Designator: UT2955
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.13 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 7.6 nS
Cossⓘ - Output Capacitance: 165 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm
Package: TO-252 SOT-223
UT2955 substitution
UT2955 Datasheet (PDF)
ut2955.pdf

UNISONIC TECHNOLOGIES CO., LTD UT2955 Power MOSFET SINGLE P-CHANNEL POWER MOSFET DESCRIPTION The UT2955 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, converters and power supplies. FEATURES * RDS(ON)
ut2955g-aa3-r ut2955l-tn3-r ut2955g-tn3-r.pdf

UNISONIC TECHNOLOGIES CO., LTD UT2955 Power MOSFET SINGLE P-CHANNEL POWER MOSFET DESCRIPTION The UT2955 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, converters and power supplies. FEATURES * RDS(ON)
ut2955g.pdf

UT2955Gwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbo
Datasheet: UFZ44 , URFP150 , UT12N10 , UT2N10 , 12P10 , 7P20 , UF9640 , UF9Z24 , IRF630 , UTT120P06 , UTT12P10 , UTT16P10 , UTT18P10 , UTT25P10 , UTT50P10 , UTT70P10 , UTT80P06 .
History: SGSP492 | SIJ800DP | SIHFP22N60K | 2SK3507 | TP2435 | ZXMN3G32DN8 | MTN12N60FP
Keywords - UT2955 MOSFET datasheet
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History: SGSP492 | SIJ800DP | SIHFP22N60K | 2SK3507 | TP2435 | ZXMN3G32DN8 | MTN12N60FP



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