UTT18P10 Datasheet and Replacement
Type Designator: UTT18P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 61 nC
tr ⓘ - Rise Time: 73 nS
Cossⓘ - Output Capacitance: 590 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO-252 TO-220
UTT18P10 substitution
UTT18P10 Datasheet (PDF)
utt18p10.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT18P10 Power MOSFET 100V, 18A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT18P10 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)
utt18p10l-tn3-r utt18p10g-tn3-r utt18p10l-ta3-t utt18p10g-ta3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT18P10 Power MOSFET 100V, 18A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT18P10 is a P-channel power MOSFET usingUTCs advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)
utt18p06.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT18P06 Power MOSFET 18.3A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT18P06 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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