All MOSFET. UT2301 Datasheet

 

UT2301 Datasheet and Replacement


   Type Designator: UT2301
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 127 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: SOT-23 SOT-23-3
 

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UT2301 Datasheet (PDF)

 ..1. Size:183K  utc
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UT2301

UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET 2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications su

 0.1. Size:228K  utc
ut2301g-ae2-r ut2301g-ae3-r.pdf pdf_icon

UT2301

UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET Y2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications s

 0.2. Size:159K  utc
ut2301z.pdf pdf_icon

UT2301

UNISONIC TECHNOLOGIES CO., LTD UT2301Z Power MOSFET 2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301Z is a P-channel enhancement mode power MOSFET with fast switching speed, low on-resistance and favorablestabilization. It can be used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC co

 0.3. Size:794K  cn vbsemi
ut2301g-ae3-r.pdf pdf_icon

UT2301

UT2301G-AE3-Rwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLIC

Datasheet: UTT60N10 , UTT6N10 , UTT75N08 , UTT75N75 , UTT80N06 , UTT80N08 , UTT80N75 , UDN302 , RFP50N06 , UT2301Z , UT2305 , UT2305A , UT2311 , UT2321 , UT2327 , UT3419 , UT6302 .

History: APT8052BLL

Keywords - UT2301 MOSFET datasheet

 UT2301 cross reference
 UT2301 equivalent finder
 UT2301 lookup
 UT2301 substitution
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