UT3416 Specs and Replacement

Type Designator: UT3416

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.7 nS

Cossⓘ - Output Capacitance: 187 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SOT-23

UT3416 substitution

- MOSFET ⓘ Cross-Reference Search

 

UT3416 datasheet

 ..1. Size:121K  utc
 ut3416.pdf pdf_icon

UT3416

UNISONIC TECHNOLOGIES CO., LTD UT3416 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3416 is advanced n-channel enhancement MOSFET which can provide the designer with the best combination of excellent RDS (ON), low gate charge and low gate voltages as low as 1.8V.When it is used as a load switch or in PWM application, the UTC UT3416 ... See More ⇒

 9.1. Size:342K  central
 cmut3410.pdf pdf_icon

UT3416

CMUT3410 NPN CMUT7410 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY LOW VCE(SAT) The CENTRAL SEMICONDUCTOR CMUT3410, and SILICON TRANSISTORS CMUT7410, are low VCE(SAT) silicon transistors in an ULTRAmini surface mount package designed for small signal general purpose amplifier and switching applications, requiring low collector emitter saturation voltage.... See More ⇒

 9.2. Size:195K  utc
 ut3414.pdf pdf_icon

UT3416

UNISONIC TECHNOLOGIES CO., LTD UT3414 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ... See More ⇒

 9.3. Size:207K  utc
 ut3419.pdf pdf_icon

UT3416

UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS(ON), low gate charge. The gate voltage is as low as 2.5V. The UTC UT3419 can be applied in PWM applications or used as a load switch. FEATURES * RDS(ON) ... See More ⇒

SHOW MORE

Detailed specifications: UT2308, UT2312, UT2316, UT3055, UT3400, UT3404, UT3406, UT3414, IRF520, UT3418, UT3N01Z, UT4414, UT45N03, UT4800, UT50N03, UT6402, UT75N02

Keywords - UT3416 MOSFET specs

 UT3416 cross reference

 UT3416 equivalent finder

 UT3416 pdf lookup

 UT3416 substitution

 UT3416 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility