All MOSFET. UT3418 Datasheet

 

UT3418 MOSFET. Datasheet pdf. Equivalent


   Type Designator: UT3418
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
   |Id|ⓘ - Maximum Drain Current: 3.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3 nC
   trⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
   Package: SOT-23

 UT3418 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UT3418 Datasheet (PDF)

 ..1. Size:143K  utc
 ut3418.pdf

UT3418 UT3418

UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

 9.1. Size:342K  central
 cmut3410.pdf

UT3418 UT3418

CMUT3410 NPNCMUT7410 PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARY LOW VCE(SAT) The CENTRAL SEMICONDUCTOR CMUT3410, and SILICON TRANSISTORSCMUT7410, are low VCE(SAT) silicon transistors in an ULTRAmini surface mount package designed for small signal general purpose amplifier and switching applications, requiring low collector emitter saturation voltage.

 9.2. Size:195K  utc
 ut3414.pdf

UT3418 UT3418

UNISONIC TECHNOLOGIES CO., LTD UT3414 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

 9.3. Size:207K  utc
 ut3419.pdf

UT3418 UT3418

UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFETproviding designers with excellent RDS(ON), low gate charge. The gate voltage is as low as 2.5V. The UTC UT3419 can be applied in PWM applications or used as a load switch. FEATURES * RDS(ON)

 9.4. Size:121K  utc
 ut3416.pdf

UT3418 UT3418

UNISONIC TECHNOLOGIES CO., LTD UT3416 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3416 is advanced n-channel enhancementMOSFET which can provide the designer with the best combination of excellent RDS (ON), low gate charge and low gate voltages as low as 1.8V.When it is used as a load switch or in PWM application, the UTC UT3416

Datasheet: UT2312 , UT2316 , UT3055 , UT3400 , UT3404 , UT3406 , UT3414 , UT3416 , IRF530 , UT3N01Z , UT4414 , UT45N03 , UT4800 , UT50N03 , UT6402 , UT75N02 , UT8205A .

History: NVF3055L108 | FDMS3500

 

 
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