All MOSFET. UT3N01Z Datasheet

 

UT3N01Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: UT3N01Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4 V
   |Id|ⓘ - Maximum Drain Current: 0.15 A
   Tjⓘ - Maximum Junction Temperature: 85 °C
   Qgⓘ - Total Gate Charge: 5 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.9 Ohm
   Package: SOT-23-3 SOT-323 SOT-523

 UT3N01Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UT3N01Z Datasheet (PDF)

 ..1. Size:215K  utc
 ut3n01z.pdf

UT3N01Z UT3N01Z

UNISONIC TECHNOLOGIES CO., LTD UT3N01Z Power MOSFET N-CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS DESCRIPTION The UT3N01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This devices general purpose is for switching device applications. FEATURES * RDS(ON)

 9.1. Size:241K  utc
 ut3n06g-ab3-r ut3n06g-ae3-r ut3n06l-tm3-t ut3n06g-tm3-t ut3n06l-tn3-r ut3n06g-tn3-r.pdf

UT3N01Z UT3N01Z

UNISONIC TECHNOLOGIES CO., LTD UT3N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT3N06 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields. FEATURES * Simple drive requirement SYMBOL DrainGate

 9.2. Size:232K  utc
 ut3n06.pdf

UT3N01Z UT3N01Z

UNISONIC TECHNOLOGIES CO., LTD UT3N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT3N06 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields. FEATURES * Simple drive requirement SYMBOL DrainGate

 9.3. Size:1473K  cn vbsemi
 ut3n06g-ae3.pdf

UT3N01Z UT3N01Z

UT3N06G-AE3www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FDD6512A

 

 
Back to Top