UT3N01Z Datasheet and Replacement. Cross Reference Search

UT3N01Z Datasheet (PDF)

..1. Size:215K utc
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UNISONIC TECHNOLOGIES CO., LTD UT3N01Z Power MOSFET N-CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS DESCRIPTION The UT3N01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This devices general purpose is for switching device applications. FEATURES * RDS(ON)

9.1. Size:241K utc
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UNISONIC TECHNOLOGIES CO., LTD UT3N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT3N06 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields. FEATURES * Simple drive requirement SYMBOL DrainGate

9.2. Size:232K utc
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9.3. Size:1473K cn vbsemi
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UT3N06G-AE3www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)

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