UTM2054 Datasheet and Replacement
Type Designator: UTM2054
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOT-89 SOT-23
UTM2054 substitution
UTM2054 Datasheet (PDF)
utm2054.pdf
UNISONIC TECHNOLOGIES CO., LTD UTM2054 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM2054 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 35m @VGS=10V * RDS(ON)= 45m @VGS=4.5V * RDS(ON)= 11
utm2054.pdf
SMD Type MOSFETN-Channel MOSFETUTM2054 (KTM2054)1.70 0.1 Features VDS (V) = 20V ID = 5 A (VGS = 10V) RDS(ON) 40m (VGS = 10V)0.42 0.10.46 0.1 RDS(ON) 54m (VGS = 4.5V) RDS(ON) 130m (VGS = 2.5V)1.Gate Fast switching capability2.Drain3.SourceDrainGateSource Absolute Maximum Ratings Ta = 25Parameter Symbol Rat
utm2054l-ab3-r utm2054g-ab3-r utm2054l-ae3-r utm2054g-ae3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UTM2054 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM2054 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 35m @VGS=10V * RDS(ON)= 45m @VGS=4.5V * RDS(ON)= 11
Datasheet: UT4800 , UT50N03 , UT6402 , UT75N02 , UT8205A , UTD351 , UTD410 , UTD452 , RU7088R , UTM2513 , UTN3055 , UTP45N02 , UTT200N02 , UP2003 , UT2309 , UT30P03 , UT3310 .
History: AO4712 | HTD950P06 | HGP039N08S | KI4464DY | HGB029N06SL | AO4821 | 2SK1169
Keywords - UTM2054 MOSFET datasheet
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History: AO4712 | HTD950P06 | HGP039N08S | KI4464DY | HGB029N06SL | AO4821 | 2SK1169
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