All MOSFET. UT3401 Datasheet

 

UT3401 MOSFET. Datasheet pdf. Equivalent

Type Designator: UT3401

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.4 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 4.2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 3.2 nS

Drain-Source Capacitance (Cd): 115 pF

Maximum Drain-Source On-State Resistance (Rds): 0.042 Ohm

Package: SOT-23

UT3401 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UT3401 Datasheet (PDF)

1.1. ut3401.pdf Size:292K _utc

UT3401
UT3401

UNISONIC TECHNOLOGIES CO., LTD UT3401 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applicat

1.2. ut3401z.pdf Size:301K _utc

UT3401
UT3401

UNISONIC TECHNOLOGIES CO., LTD UT3401Z Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401Z is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applic

 5.1. ut3404.pdf Size:247K _utc

UT3401
UT3401

UNISONIC TECHNOLOGIES CO., LTD UT3404 Power MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UT3404 is N-Channel enhancement mode power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM app

5.2. ut3403.pdf Size:272K _utc

UT3401
UT3401

UNISONIC TECHNOLOGIES CO., LTD UT3403 Power MOSFET -2.6 Amps, 30 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT3403 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or

 5.3. ut3409.pdf Size:197K _utc

UT3401
UT3401

UNISONIC TECHNOLOGIES CO., LTD UT3409 Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) <130m? @VGS = -10V * RDS(ON) < 200m? @VGS = -4.5V * Low capacitance

5.4. ut3400.pdf Size:150K _utc

UT3401
UT3401

UNISONIC TECHNOLOGIES CO., LTD UT3400 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT3400 is an N-ch enhancement MOSFET providing the customers with perfect RDS(ON) and low gate charge. This device can be operated with 2.5V low gate voltage. The UTC UT3400 is optimized for applications, such as a load switch or in PWM. FEATURES * VDS (V)=30V

 5.5. ut3406.pdf Size:126K _utc

UT3401
UT3401

UNISONIC TECHNOLOGIES CO., LTD UT3406 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT3406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and can be operated at low gate voltages. This device is perfect fit for use as a load switch or in PWM applications. FEATURES * VDS (V) = 30V * ID = 3.6A

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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