UT3403 MOSFET. Datasheet pdf. Equivalent
Type Designator: UT3403
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.4 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.4 V
Maximum Drain Current |Id|: 2.6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 4.4 nC
Rise Time (tr): 4.4 nS
Drain-Source Capacitance (Cd): 55 pF
Maximum Drain-Source On-State Resistance (Rds): 0.102 Ohm
Package: SOT-23 SOT-23-3
UT3403 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UT3403 Datasheet (PDF)
ut3403.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3403 Power MOSFET -2.6 Amps, 30 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT3403 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch
ut3404.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3404 Power MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UT3404 is N-Channel enhancement mode power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM
ut3401.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3401 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWMappli
ut3401z.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3401Z Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401Z is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWMapp
ut3401zl-ae3-r ut3401zg-ae3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3401Z Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401Z is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWMa
ut3400l-ae2-r ut3400g-ae2-r ut3400l-ae3-r ut3400g-ae3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3400 Power MOSFET 5.8A, 30V N-CHANNEL ENHANCEMENT MODE POWER 3MOSFET 21SOT-23(EIAJ SC-59) DESCRIPTION The UTC UT3400 is an N-ch enhancement MOSFET providing 3the customers with perfect RDS(ON) and low gate charge. This device can be operated with 2.5V low gate voltage. 2The UTC UT3400 is optimized for applications, such as a lo
ut3401g-ae3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3401 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWMapp
ut3406.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3406 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT3406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and can be operated at low gate voltages. This device is perfect fit for use as a load switch or in PWM applications. FEATURES * VDS (V) = 30V * ID = 3
ut3409.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3409 Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)
ut3400.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3400 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT3400 is an N-ch enhancement MOSFET providing the customers with perfect RDS(ON) and low gate charge. This device can be operated with 2.5V low gate voltage. The UTC UT3400 is optimized for applications, such as a load switch or in PWM. FEATURES * VDS (V)=30V
ut3404g-ae3-r ut3404g-s08-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3404 Power MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UT3404 is N-Channel enhancement mode power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM
ut3404.pdf
UT3404www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G 1
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