2N6965 Datasheet. Specs and Replacement

Type Designator: 2N6965  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 3200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO210

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2N6965 datasheet

 ..1. Size:1095K  ixys
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2N6965

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 9.2. Size:61K  microsemi
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2N6965

TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N697 JAN 2N696S 2N697S MAXIMUM RATINGS Ratings Symbol Value Units Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Total Power Dissipation @ T = 250C (1) 0.6 W A PT @ T = 250C (2) 2.0 W C 0 Operating & Storage Juncti... See More ⇒

 9.3. Size:270K  siliconix
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2N6965

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Detailed specifications: 2N6916, 2N6917, 2N6960, 2N6961, 2N6961A, 2N6962, 2N6963, 2N6964, IRFP064N, 2N6966, 2N6966JANTX, 2N6966JANTXV, 2N6967, 2N6967JANTX, 2N6967JANTXV, 2N6968, 2N6968JANTX

Keywords - 2N6965 MOSFET specs

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