UTT30P06 Datasheet and Replacement
Type Designator: UTT30P06
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 25.9 nS
Cossⓘ - Output Capacitance: 524 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.067 Ohm
Package: TO-220
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UTT30P06 Datasheet (PDF)
utt30p06.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT30P06 Preliminary Power MOSFET 60V, 30A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P06 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT30P06 is suitable for low voltage and hi
utt30p06l-ta3-t utt30p06g-ta3-t utt30p06l-tf3-t utt30p06g-tf3-t utt30p06l-tm3-t utt30p06g-tm3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT30P06 Power MOSFET -60V, -30A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P06 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT30P06 is suitable for low voltage and high speed
utt30p06l-tq2-t utt30p06g-tq2-t utt30p06l-tq2-r utt30p06g-tq2-r utt30p06l-tn3-r utt30p06g-tn3-r.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT30P06 Power MOSFET -60V, -30A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P06 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT30P06 is suitable for low voltage and high speed
utt30p04.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT30P04 Preliminary Power MOSFET 40A, 21V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTCs advancedtechnology. FEATURES * Low on-Resistance * Fast Switching Speed SYMBOL 2.Drain 1.G
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: LSC65R280HT | IPB22N03S4L-15 | 2SK3700
Keywords - UTT30P06 MOSFET datasheet
UTT30P06 cross reference
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History: LSC65R280HT | IPB22N03S4L-15 | 2SK3700



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