UT4430 MOSFET. Datasheet pdf. Equivalent
Type Designator: UT4430
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 103 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 638 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
Package: SOP-8
UT4430 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UT4430 Datasheet (PDF)
ut4430.pdf
UNISONIC TECHNOLOGIES CO., LTD UT4430 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT4430 uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for applications, such as high-side DC/DC conversion, notebook and sever. FEATURES * VDS(V)=30V * ID=18A (V
ut4435.pdf
UNISONIC TECHNOLOGIES CO., LTD UT4435 Power MOSFET 30V P-CHANNEL POWER MOSFET DESCRIPTION The UT4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. SOP-8 FEATURES * RDS(ON)20m @VGS=-10V * RDS(ON) 35m @VGS=-4.5V * L
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: FDS3670 | FDC658P
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