UTT80N05 MOSFET. Datasheet pdf. Equivalent
Type Designator: UTT80N05
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 312 W
Maximum Drain-Source Voltage |Vds|: 50 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 80 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 207 nC
Rise Time (tr): 34 nS
Drain-Source Capacitance (Cd): 1310 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0051 Ohm
Package: TO-220
UTT80N05 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UTT80N05 Datasheet (PDF)
utt80n05.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT80N05 Preliminary Power MOSFET 80A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N05 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith a minimum on-state resistance, superior switching performanceand low gate charge. The UTC UTT80N05 is suitable for switching regulators, DC line
utt80n06.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT80N06 Preliminary Power MOSFET 60V, 80A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N06 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith a minimum on-state resistance and high switching speed. It can also withstand high energy pluse in the avalanche and commutation mode. The UTC U
utt80n08.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT80N08 Preliminary Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc. FEATURES * Trench FET Power MOSFETS Technology SYMBOL 2.Drai
utt80n75.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT80N75 Preliminary Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N75 is an N-Channel power MOSFET, it uses UTCs advanced technology to provide customers with a minimum 1on-state resistance, low gate charge and high switching speed. TO-220 FEATURES * 80A, 75V, RDS(ON)=10m @VGS=10V, ID=20A * Low gate charge
utt80n10.pdf
UTT80N10www.VBsemi.twN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.0085 at VGS = 10 V100100 Compliant to RoHS Directive 2002/95/EC0.010 at VGS = 6 V85TO-220ABDGSN-Channel MOSFETG D S ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise not
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