RD00HVS1 Specs and Replacement

Type Designator: RD00HVS1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Package: SOT-89

RD00HVS1 substitution

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RD00HVS1 datasheet

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Detailed specifications: UT4812, UT4812Z, UT4822, UT4957, UT6898, UT7317, UTM4953, RD00HHS1, IRLZ44N, RD01MUS1, RD01MUS2, RD02MUS1, RD02MUS1B, RD02MUS2, RD05MMP1, RD06HHF1, RD07MVS1

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.