RD01MUS2 Specs and Replacement
Type Designator: RD01MUS2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Package: SOT-89
RD01MUS2 substitution
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RD01MUS2 datasheet
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Detailed specifications: UT4822, UT4957, UT6898, UT7317, UTM4953, RD00HHS1, RD00HVS1, RD01MUS1, IRF640N, RD02MUS1, RD02MUS1B, RD02MUS2, RD05MMP1, RD06HHF1, RD07MVS1, RD07MVS1B, RD07MVS2
Keywords - RD01MUS2 MOSFET specs
RD01MUS2 cross reference
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