SIF18N65C Specs and Replacement
Type Designator: SIF18N65C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm
Package: TO-220FP
SIF18N65C substitution
SIF18N65C datasheet
sif18n65c.pdf
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF18N65C N- MOS / N-CHANNEL POWER MOSFET SIF18N65C N- MOS / N-CHA... See More ⇒
Detailed specifications: SIF10N60C , SIF10N65C , SIF10N70C , SIF110N060 , SIF12N60C , SIF12N65C , SIF13N50C , SIF160N040 , K4145 , SIF1N60C , SIF1N65C , SIF2N60C , SIF2N60D , SIF2N65C , SIF2N65D , SIF2N70D , SIF4N60C .
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