SIF18N65C Datasheet and Replacement
Type Designator: SIF18N65C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm
Package: TO-220FP
SIF18N65C substitution
SIF18N65C Datasheet (PDF)
sif18n65c.pdf
Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF18N65CN- MOS / N-CHANNEL POWER MOSFET SIF18N65CN- MOS / N-CHA
Datasheet: SIF10N60C , SIF10N65C , SIF10N70C , SIF110N060 , SIF12N60C , SIF12N65C , SIF13N50C , SIF160N040 , IRFB3607 , SIF1N60C , SIF1N65C , SIF2N60C , SIF2N60D , SIF2N65C , SIF2N65D , SIF2N70D , SIF4N60C .
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