SIF6N70C Specs and Replacement
Type Designator: SIF6N70C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-251 TO-251S TO-252
SIF6N70C substitution
- MOSFET ⓘ Cross-Reference Search
SIF6N70C datasheet
sif6n70c.pdf
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF6N70C N- MOS / N-CHANNEL POWER MOSFET SIF6N70C N- MOS / N-CHANN... See More ⇒
Detailed specifications: SIF4N65C, SIF4N65D, SIF4N70C, SIF4N80C, SIF5N40D, SIF5N50C, SIF5N60C, SIF5N65C, IRFP250, SIF7N60C, SIF7N60D, SIF7N65C, SIF7N65D, SIF7N70C, SIF7N80C, SIF80N060, SIF8N50C
Keywords - SIF6N70C MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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