2SK3019C3 Specs and Replacement

Type Designator: 2SK3019C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 7.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm

Package: SOT-523

2SK3019C3 substitution

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2SK3019C3 datasheet

 ..1. Size:320K  cystek
2sk3019c3.pdf pdf_icon

2SK3019C3

Spec. No. C800C3 Issued Date 2011.01.19 CYStech Electronics Corp. Revised Date Page No. 1/8 ESD protected N-Channel Enhancement Mode MOSFET BVDSS 30V 2SK3019C3 ID 100mA 8 RDSON(MAX) Description Low voltage drive(2.5V drive) makes this device ideal for portable equipment. High speed switching ESD protected device Pb-free lead plating & ha... See More ⇒

 7.1. Size:70K  rohm
2sk3019.pdf pdf_icon

2SK3019C3

2SK3019 Transistor 2.5V Drive Nch MOS FET 2SK3019 Dimensions (Unit mm) Structure Silicon N-channel EMT3 MOSFET 1.6 0.7 0.55 0.3 ( ) 3 Applications ( ) ( ) 2 1 Interfacing, switching (30V, 100mA) 0.2 0.2 0.15 0.5 0.5 1.0 (1)Source Features (2)Gate 1) Low on-resistance. (3)Drain Abbreviated symbol KN 2) Fast switching speed. 3) Low voltage drive (2.5... See More ⇒

 7.2. Size:953K  rohm
2sk3019eb.pdf pdf_icon

2SK3019C3

Data Sheet 2.5V Drive Nch MOSFET 2SK3019EB Structure Dimensions (Unit mm) Silicon N-channel MOSFET EMT3F (3) Features 1) High-speed switching. (1) (2) 2) Low voltage drive(2.5V drive). 3) Drive circuits can be simple. 4) Parallel use is easy. Abbreviated symbol KN Application Switching Packaging specifications Inner circuit (3) Package Taping Type ... See More ⇒

 7.3. Size:1125K  mcc
2sk3019a.pdf pdf_icon

2SK3019C3

2SK3019A Features Low ON-Resistance Fast Switching Speed Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-Channel Halogen Free. Green Device (Note 1) MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range -55 C to +150 C... See More ⇒

Detailed specifications: SIF7N60D, SIF7N65C, SIF7N65D, SIF7N70C, SIF7N80C, SIF80N060, SIF8N50C, 2SK3018S3, IRF520, 2SK3541Y3, BSS123N3, BSS138C3, BSS84KS3, BSS84N3, BSS84S6R, MBNP2026G6, MBNP2074G6

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