All MOSFET. MTB02N03H8 Datasheet

 

MTB02N03H8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTB02N03H8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 898 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: DFN5X6

 MTB02N03H8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTB02N03H8 Datasheet (PDF)

 ..1. Size:331K  cystek
 mtb02n03h8.pdf

MTB02N03H8 MTB02N03H8

Spec. No. : C575H8 Issued Date : 2012.05.09 CYStech Electronics Corp.Revised Date :2012.11.12 Page No. : 1/11 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB02N03H8ID 75ARDS(ON)@VGS=10V, ID=30A 2.6 m(typ)RDS(ON)@VGS=4.5V, ID=25A 3.5 m(typ)Description The MTB02N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combin

 6.1. Size:311K  cystek
 mtb02n03q8.pdf

MTB02N03H8 MTB02N03H8

Spec. No. : C575Q8 Issued Date : 2012.01.18 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB02N03Q8ID 25ARDSON@VGS=10V, ID=25A 2.2m(typ) RDSON@VGS=4.5V, ID=15A 2.3m(typ) Description The MTB02N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s

 6.2. Size:279K  cystek
 mtb02n03j3.pdf

MTB02N03H8 MTB02N03H8

Spec. No. : C575J3 Issued Date : 2012.01.03 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB02N03J3 ID 136ARDS(ON)@VGS=10V, ID=45A 2.7m(typ) RDS(ON)@VGS=4.5V, ID=36A 3.8m(typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS com

 9.1. Size:478K  cystek
 mtb028n10qncq8.pdf

MTB02N03H8 MTB02N03H8

Spec. No. : C168Q8 Issued Date : 2016.11.18 CYStech Electronics Corp. Revised Date : 2016.11.22 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTB028N10QNCQ8 BVDSS 100VID @ TA=25C, VGS=10V 6.6A RDS(ON)@VGS=10V, ID=4A 19.3 m(typ)Features RDS(ON)@VGS=4.5V, ID=3A 27.0m(typ) Single Drive Requirement Low On-resistance Fast Switching Characterist

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