MTB02N03H8 Specs and Replacement

Type Designator: MTB02N03H8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 898 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: DFN5X6

MTB02N03H8 substitution

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MTB02N03H8 datasheet

 ..1. Size:331K  cystek
 mtb02n03h8.pdf pdf_icon

MTB02N03H8

Spec. No. C575H8 Issued Date 2012.05.09 CYStech Electronics Corp. Revised Date 2012.11.12 Page No. 1/11 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB02N03H8 ID 75A RDS(ON)@VGS=10V, ID=30A 2.6 m (typ) RDS(ON)@VGS=4.5V, ID=25A 3.5 m (typ) Description The MTB02N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combin... See More ⇒

 6.1. Size:311K  cystek
 mtb02n03q8.pdf pdf_icon

MTB02N03H8

Spec. No. C575Q8 Issued Date 2012.01.18 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB02N03Q8 ID 25A RDSON@VGS=10V, ID=25A 2.2m (typ) RDSON@VGS=4.5V, ID=15A 2.3m (typ) Description The MTB02N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s... See More ⇒

 6.2. Size:279K  cystek
 mtb02n03j3.pdf pdf_icon

MTB02N03H8

Spec. No. C575J3 Issued Date 2012.01.03 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB02N03J3 ID 136A RDS(ON)@VGS=10V, ID=45A 2.7m (typ) RDS(ON)@VGS=4.5V, ID=36A 3.8m (typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS com... See More ⇒

 9.1. Size:478K  cystek
 mtb028n10qncq8.pdf pdf_icon

MTB02N03H8

Spec. No. C168Q8 Issued Date 2016.11.18 CYStech Electronics Corp. Revised Date 2016.11.22 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET MTB028N10QNCQ8 BVDSS 100V ID @ TA=25 C, VGS=10V 6.6A RDS(ON)@VGS=10V, ID=4A 19.3 m (typ) Features RDS(ON)@VGS=4.5V, ID=3A 27.0m (typ) Single Drive Requirement Low On-resistance Fast Switching Characterist... See More ⇒

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Detailed specifications: MTA17A02CDN6, MTA17A02CDV8, MTA25N02J3, MTA340N02N3, MTA55N02N3, MTA65N15H8, MTA65N20H8, MTA90N03ZN3, MMIS60R580P, MTB02N03J3, MTB02N03Q8, MTB030N04N3, MTB032P06V8, MTB03N03H8, MTB04N03AQ8, MTB04N03E3, MTB04N03H8

Keywords - MTB02N03H8 MOSFET specs

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