MTB04N03Q8
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTB04N03Q8
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 25
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 50
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 405
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035
Ohm
Package:
SOP-8
MTB04N03Q8
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTB04N03Q8
Datasheet (PDF)
..1. Size:310K cystek
mtb04n03q8.pdf 
Spec. No. : C789Q8 Issued Date : 2011.12.16 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB04N03Q8ID 25ARDSON@VGS=10V, ID=18A 3.5m(typ) RDSON@VGS=4.5V, ID=12A 4.8m(typ) Description The MTB04N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s
6.1. Size:338K cystek
mtb04n03j3.pdf
Spec. No. : C789J3 Issued Date : 2011.12.12 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB04N03J3 ID 75ARDS(ON)@VGS=10V, ID=30A 3.1m(typ) RDS(ON)@VGS=4.5V, ID=24A 4.7m(typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free l
6.2. Size:318K cystek
mtb04n03aq8.pdf
Spec. No. : C889Q8 Issued Date : 2013.12.02 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB04N03AQ8ID @VGS=10V 20ARDSON@VGS=10V, ID=18A 4.4m(typ) RDSON@VGS=4.5V, ID=12A 5.8m(typ) Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt
6.3. Size:297K cystek
mtb04n03e3.pdf
Spec. No. : C889E3 Issued Date : 2013.02.20 CYStech Electronics Corp.Revised Date : 2013.02.26 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB04N03E3 ID 115A3.8m VGS=10V, ID=30A RDSON(TYP) 6.1m VGS=4.5V, ID=24A Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead plating
6.4. Size:443K cystek
mtb04n03h8.pdf
Spec. No. : C789H8 Issued Date : 2010.09.23 CYStech Electronics Corp.Revised Date : 2014.04.24 Page No. : 1/10 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB04N03H8ID 75ARDS(ON)@VGS=10V, ID=30A 3.2 m(typ)RDS(ON)@VGS=4.5V, ID=25A 4.9 m(typ)Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynami
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