MTB050P10F3 Specs and Replacement

Type Designator: MTB050P10F3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.4 nS

Cossⓘ - Output Capacitance: 227 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm

Package: TO-263

MTB050P10F3 substitution

- MOSFET ⓘ Cross-Reference Search

 

MTB050P10F3 datasheet

 ..1. Size:525K  cystek
 mtb050p10f3.pdf pdf_icon

MTB050P10F3

Spec. No. C975F3 Issued Date 2014.08.13 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB050P10F3 ID @ VGS=-10V -40A RDSON(TYP) @ VGS=-10V, ID=-20A 46m RDSON(TYP) @ VGS=-4.5V, ID=-15A 52m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching... See More ⇒

 5.1. Size:270K  cystek
 mtb050p10e3.pdf pdf_icon

MTB050P10F3

Spec. No. C975E3 Issued Date 2014.07.10 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB050P10E3 ID @ VGS=-10V -40A 46m RDSON(TYP) @ VGS=-10V, ID=-20A RDSON(TYP) @ VGS=-4.5V, ID=-15A 52m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching ... See More ⇒

 8.1. Size:550K  cystek
 mtb050n15j3.pdf pdf_icon

MTB050P10F3

Spec. No. C979J3 Issued Date 2014.08.14 CYStech Electronics Corp. Revised Date 2014.08.18 Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 150V MTB050N15J3 ID @VGS=10V 20A RDS(ON)@VGS=10V, ID=15A 47.5m (typ) RDS(ON)@VGS=4.5V, ID=10A 47.5m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free p... See More ⇒

 9.1. Size:362K  cystek
 mtb05n03hq8.pdf pdf_icon

MTB050P10F3

Spec. No. C738Q8 Issued Date 2009.08.19 CYStech Electronics Corp. Revised Date 2011.10.03 Page No. 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB05N03HQ8 ID 20A RDSON(max) 5m Description The MTB05N03HQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on... See More ⇒

SHOW MORE

Detailed specifications: MTB03N03H8, MTB04N03AQ8, MTB04N03E3, MTB04N03H8, MTB04N03J3, MTB04N03Q8, MTB050N15J3, MTB050P10E3, IRF540, MTB05N03HQ8, MTB060N06I3, MTB060N15J3, MTB06N03E3, MTB06N03H8, MTB06N03I3, MTB06N03J3, MTB06N03Q8

Keywords - MTB050P10F3 MOSFET specs

 MTB050P10F3 cross reference

 MTB050P10F3 equivalent finder

 MTB050P10F3 pdf lookup

 MTB050P10F3 substitution

 MTB050P10F3 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility