All MOSFET. MTB050P10F3 Datasheet

 

MTB050P10F3 Datasheet and Replacement


   Type Designator: MTB050P10F3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 45 nC
   tr ⓘ - Rise Time: 16.4 nS
   Cossⓘ - Output Capacitance: 227 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: TO-263
 

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MTB050P10F3 Datasheet (PDF)

 ..1. Size:525K  cystek
 mtb050p10f3.pdf pdf_icon

MTB050P10F3

Spec. No. : C975F3 Issued Date : 2014.08.13 CYStech Electronics Corp. Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB050P10F3 ID @ VGS=-10V -40A RDSON(TYP) @ VGS=-10V, ID=-20A 46m RDSON(TYP) @ VGS=-4.5V, ID=-15A 52m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching

 5.1. Size:270K  cystek
 mtb050p10e3.pdf pdf_icon

MTB050P10F3

Spec. No. : C975E3 Issued Date : 2014.07.10 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -100VMTB050P10E3 ID @ VGS=-10V -40A46m RDSON(TYP) @ VGS=-10V, ID=-20A RDSON(TYP) @ VGS=-4.5V, ID=-15A 52m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching

 8.1. Size:550K  cystek
 mtb050n15j3.pdf pdf_icon

MTB050P10F3

Spec. No. : C979J3 Issued Date : 2014.08.14 CYStech Electronics Corp. Revised Date : 2014.08.18 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 150V MTB050N15J3 ID @VGS=10V 20A RDS(ON)@VGS=10V, ID=15A 47.5m(typ) RDS(ON)@VGS=4.5V, ID=10A 47.5m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free p

 9.1. Size:362K  cystek
 mtb05n03hq8.pdf pdf_icon

MTB050P10F3

Spec. No. : C738Q8 Issued Date : 2009.08.19 CYStech Electronics Corp.Revised Date : 2011.10.03 Page No. : 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB05N03HQ8ID 20ARDSON(max) 5m Description The MTB05N03HQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

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Keywords - MTB050P10F3 MOSFET datasheet

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