MTB060N15J3
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTB060N15J3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4
V
|Id|ⓘ - Maximum Drain Current: 16
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 28
nC
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 111
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.059
Ohm
Package:
TO-252
MTB060N15J3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTB060N15J3
Datasheet (PDF)
..1. Size:365K cystek
mtb060n15j3.pdf 
Spec. No. : C970J3 Issued Date : 2014.06.14 CYStech Electronics Corp.Revised Date : 2014.06.16 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 150VMTB060N15J3 ID @VGS=10V 16ARDS(ON)@VGS=10V, ID=4A 59m(typ) RDS(ON)@VGS=4.5V, ID=2A 60m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package E
7.1. Size:316K cystek
mtb060n06i3.pdf
Spec. No. : C708I3 Issued Date : 2014.04.30 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N -Channel Enhancement Mode Power MOSFET BVDSS 60VMTB060N06I3 ID 16ARDSON(MAX)@VGS=10V, ID=10A 35m(typ.) RDSON(MAX)@VGS=5V, ID=8A 40m(typ.) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Cir
9.1. Size:292K cystek
mtb06n03j3.pdf
Spec. No. : C441J3 Issued Date : 2009.03.02 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB06N03J3 ID 75ARDS(ON)@VGS=10V, ID=30A 4.5m(typ) RDS(ON)@VGS=5V, ID=24A 7.3m(typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS complia
9.2. Size:281K cystek
mtb06n03e3.pdf
Spec. No. : C441E3 Issued Date : 2010.08.13 CYStech Electronics Corp.Revised Date : 2013.02.26 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB06N03E3 ID 102A4.3m VGS=10V, ID=30A RDSON(TYP) 6.6m VGS=4.5V, ID=24A Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead plating
9.3. Size:334K cystek
mtb06n03h8.pdf
Spec. No. : C710H8 Issued Date : 2009.05.07 CYStech Electronics Corp.Revised Date : 2012.07.31 Page No. : 1/11 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB06N03H8ID 75ARDSON(max) 6m Description The MTB06N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-
9.4. Size:328K cystek
mtb06n03v8.pdf
Spec. No. : C441V8 Issued Date : 2010.10.05 CYStech Electronics Corp.Revised Date : 2013.10.30 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB06N03V8ID 44A4.5m VGS=10V, ID=14A RDSON(TYP) 6.4m VGS=4.5V, ID=10A Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rat
9.5. Size:309K cystek
mtb06n03q8.pdf
Spec. No. : C441Q8 Issued Date : 2009.05.07 CYStech Electronics Corp.Revised Date : 2012.08.06 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB06N03Q8ID 23ARDSON@VGS=10V, ID=18A 4.6m(typ)RDSON@VGS=4.5V, ID=12A 6.5m(typ)Description The MTB06N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination
9.6. Size:265K cystek
mtb06n03i3.pdf
Spec. No. : C441I3 Issued Date : 2012.02.13 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB06N03I3 ID 75ARDS(ON)@VGS=10V, ID=30A 4.5m(typ) RDS(ON)@VGS=5V, ID=24A 7.3m(typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package
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