All MOSFET. MTB06N03J3 Datasheet

 

MTB06N03J3 MOSFET. Datasheet pdf. Equivalent

Type Designator: MTB06N03J3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 53 nC

Rise Time (tr): 12 nS

Drain-Source Capacitance (Cd): 316 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0045 Ohm

Package: TO-252

MTB06N03J3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTB06N03J3 Datasheet (PDF)

1.1. mtb06n03j3.pdf Size:292K _cystek

MTB06N03J3
MTB06N03J3

Spec. No. : C441J3 Issued Date : 2009.03.02 CYStech Electronics Corp. Revised Date : 2013.12.26 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB06N03J3 ID 75A RDS(ON)@VGS=10V, ID=30A 4.5mΩ(typ) RDS(ON)@VGS=5V, ID=24A 7.3mΩ(typ) Features • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS complia

2.1. mtb06n03i3.pdf Size:265K _cystek

MTB06N03J3
MTB06N03J3

Spec. No. : C441I3 Issued Date : 2012.02.13 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB06N03I3 ID 75A RDS(ON)@VGS=10V, ID=30A 4.5mΩ(typ) RDS(ON)@VGS=5V, ID=24A 7.3mΩ(typ) Features • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package

2.2. mtb06n03h8.pdf Size:334K _cystek

MTB06N03J3
MTB06N03J3

Spec. No. : C710H8 Issued Date : 2009.05.07 CYStech Electronics Corp. Revised Date : 2012.07.31 Page No. : 1/11 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB06N03H8 ID 75A RDSON(max) 6mΩ Description The MTB06N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

 2.3. mtb06n03v8.pdf Size:328K _cystek

MTB06N03J3
MTB06N03J3

Spec. No. : C441V8 Issued Date : 2010.10.05 CYStech Electronics Corp. Revised Date : 2013.10.30 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB06N03V8 ID 44A 4.5mΩ VGS=10V, ID=14A RDSON(TYP) 6.4mΩ VGS=4.5V, ID=10A Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rat

2.4. mtb06n03q8.pdf Size:309K _cystek

MTB06N03J3
MTB06N03J3

Spec. No. : C441Q8 Issued Date : 2009.05.07 CYStech Electronics Corp. Revised Date : 2012.08.06 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB06N03Q8 ID 23A RDSON@VGS=10V, ID=18A 4.6mΩ(typ) RDSON@VGS=4.5V, ID=12A 6.5mΩ(typ) Description The MTB06N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination

 2.5. mtb06n03e3.pdf Size:281K _cystek

MTB06N03J3
MTB06N03J3

Spec. No. : C441E3 Issued Date : 2010.08.13 CYStech Electronics Corp. Revised Date : 2013.02.26 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB06N03E3 ID 102A 4.3mΩ VGS=10V, ID=30A RDSON(TYP) 6.6mΩ VGS=4.5V, ID=24A Features • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Pb-free lead plating

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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