MTB090N06I3 Specs and Replacement

Type Designator: MTB090N06I3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 22 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO-251

MTB090N06I3 substitution

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MTB090N06I3 datasheet

 ..1. Size:259K  cystek
 mtb090n06i3.pdf pdf_icon

MTB090N06I3

Spec. No. C420I3 Issued Date 2014.07.11 CYStech Electronics Corp. Revised Date Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB090N06I3 ID@VGS=10V 5A 70m VGS=10V, ID=3A RDSON(TYP) 82m VGS=4.5V, ID=2A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead ... See More ⇒

 5.1. Size:613K  cystek
 mtb090n06n3.pdf pdf_icon

MTB090N06I3

Spec. No. C420N3 CYStech Electronics Corp. Issued Date 2014.01.24 Revised Date 2018.07.26 Page No. 1/9 60V N-CHANNEL Enhancement Mode MOSFET BVDSS 60V MTB090N06N3 ID @ TA=25 C, VGS=10V 3.9A RDSON@VGS=10V, ID=3A 67m (typ) RDSON@VGS=4.5V, ID=2A 75m (typ) Features Simple drive requirement Small package outline Pb-free lead plating and halogen-free... See More ⇒

 9.1. Size:278K  cystek
 mtb09p03j3.pdf pdf_icon

MTB090N06I3

Spec. No. C808J3 Issued Date 2010.01.18 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -30V MTB09P03J3 ID -75A 8m (typ.) RDSON@VGS=-10V, ID=-25A 11m (typ.) Features RDSON@VGS=-4.5V, ID=-10A Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free packag... See More ⇒

 9.2. Size:589K  cystek
 mtb09n06j3.pdf pdf_icon

MTB090N06I3

Spec. No. C912J3 Issued Date 2013.07.24 CYStech Electronics Corp. Revised Date 2014.07.24 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB09N06J3 ID 50A RDS(ON)@VGS=10V, ID=20A 6.3 m (typ) RDS(ON)@VGS=4.5V, ID=20A 9 m (typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristi... See More ⇒

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Detailed specifications: MTB06N03E3, MTB06N03H8, MTB06N03I3, MTB06N03J3, MTB06N03Q8, MTB06N03V8, MTB070N11J3, MTB08N04J3, IRF3710, MTB090N06N3, MTB09N03H8, MTB09N03V8, MTB09N04H8, MTB09N06J3, MTB09N06Q8, MTB09P03J3, MTB110P10E3

Keywords - MTB090N06I3 MOSFET specs

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