MTB09N06J3 Specs and Replacement

Type Designator: MTB09N06J3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 285 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm

Package: TO-252

MTB09N06J3 substitution

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MTB09N06J3 datasheet

 ..1. Size:589K  cystek
 mtb09n06j3.pdf pdf_icon

MTB09N06J3

Spec. No. C912J3 Issued Date 2013.07.24 CYStech Electronics Corp. Revised Date 2014.07.24 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB09N06J3 ID 50A RDS(ON)@VGS=10V, ID=20A 6.3 m (typ) RDS(ON)@VGS=4.5V, ID=20A 9 m (typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristi... See More ⇒

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 mtb09n06q8.pdf pdf_icon

MTB09N06J3

Spec. No. C912Q8 Issued Date 2014.07.24 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB09N06Q8 ID @VGS=10V 18A RDSON@VGS=10V, ID=12A 7.3m (typ) RDSON@VGS=4.5V, ID=10A 8.4m (typ) Features Single Drive Requirement Fast Switching Characteristic Low RDS(ON) Pb-free lead plating and ha... See More ⇒

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 mtb09n04h8.pdf pdf_icon

MTB09N06J3

Spec. No. C892H8 Issued Date 2013.02.01 CYStech Electronics Corp. Revised Date Page No. 1/10 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 40V MTB09N04H8 ID 60A 6m VGS=10V, ID=10A RDSON(TYP) 10m VGS=4.5V, ID=8A Description The MTB09N04H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching... See More ⇒

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 mtb09n03h8.pdf pdf_icon

MTB09N06J3

Spec. No. C709H8 Issued Date 2009.05.07 CYStech Electronics Corp. Revised Date 2012.11.12 Page No. 1/11 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB09N03H8 ID 56A RDS(ON)@VGS=10V, ID=25A 7 m (typ) RDS(ON)@VGS=4.5V, ID=20A 13 m (typ) Description The MTB09N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combin... See More ⇒

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Detailed specifications: MTB06N03V8, MTB070N11J3, MTB08N04J3, MTB090N06I3, MTB090N06N3, MTB09N03H8, MTB09N03V8, MTB09N04H8, P55NF06, MTB09N06Q8, MTB09P03J3, MTB110P10E3, MTB110P10F3, MTB110P10J3, MTB11N03Q8, MTB12N03J3, MTB12N03Q8

Keywords - MTB09N06J3 MOSFET specs

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