MTB110P10J3 Specs and Replacement

Type Designator: MTB110P10J3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.2 nS

Cossⓘ - Output Capacitance: 104 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.079 Ohm

Package: TO-252

MTB110P10J3 substitution

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MTB110P10J3 datasheet

 ..1. Size:595K  cystek
 mtb110p10j3.pdf pdf_icon

MTB110P10J3

Spec. No. C968J3 Issued Date 2014.08.07 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -100V MTB110P10J3 ID -14A RDS(ON)@VGS=-10V, ID=-4.5A 79m (typ) RDS(ON)@VGS=-4.5V, ID=-4A 90m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & halogen-free package ... See More ⇒

 5.1. Size:345K  cystek
 mtb110p10l3.pdf pdf_icon

MTB110P10J3

Spec. No. C968L3 Issued Date 2014.12.23 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB110P10L3 ID@VGS=-10V, TA=25 C -3.8A ID@VGS=-10V, TC=25 C -10.8A 85m (typ.) RDSON@VGS=-10V, ID=-4.5A Features 96m (typ.) RDSON@VGS=-4.5V, ID=-4A Simple Drive Requirement Low On-resistance F... See More ⇒

 5.2. Size:525K  cystek
 mtb110p10f3.pdf pdf_icon

MTB110P10J3

Spec. No. C968F3 Issued Date 2014.08.05 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB110P10F3 ID @ VGS=-10V -23A RDSON(TYP) @ VGS=-10V, ID=-11A 80m RDSON(TYP) @ VGS=-4.5V, ID=-8A 93m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching ... See More ⇒

 5.3. Size:518K  cystek
 mtb110p10e3.pdf pdf_icon

MTB110P10J3

Spec. No. C968E3 Issued Date 2014.08.04 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB110P10E3 ID @ VGS=-10V -23A RDSON(TYP) @ VGS=-10V, ID=-11A 80m RDSON(TYP) @ VGS=-4.5V, ID=-8A 93m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching ... See More ⇒

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Detailed specifications: MTB09N03H8, MTB09N03V8, MTB09N04H8, MTB09N06J3, MTB09N06Q8, MTB09P03J3, MTB110P10E3, MTB110P10F3, IRF9540, MTB11N03Q8, MTB12N03J3, MTB12N03Q8, MTB12N04J3, MTB12P04J3, MTB12P06J3, MTB13N03Q8, MTB14A03V8

Keywords - MTB110P10J3 MOSFET specs

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